DotFETs: MOSFETs strained by a single SiGe dot in a low-temperature ELA technology

C Biasotto

Research output: ThesisDissertation (TU Delft)

Original languageEnglish
QualificationDoctor of Philosophy
Awarding Institution
  • Delft University of Technology
  • Nanver, Lis, Supervisor
Award date20 Oct 2011
Print ISBNs978-90-8570-425-6
Publication statusPublished - 2011


  • Diss. prom. aan TU Delft

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