Downscaling of Al/Si-gate MOSFETs with Self-Aligned Laser Annealed Source/Drain Junctions

C Biasotto, V Jovanovic, LK Nanver, J van der Cingel

Research output: Chapter in Book/Conference proceedings/Edited volumeConference contributionProfessional

Original languageUndefined/Unknown
Title of host publicationProc. of SAFE 2009
EditorsPJ French
Place of PublicationVeldhoven, the Netherlands
PublisherSTW
Pages189-192
Number of pages4
ISBN (Print)978-90-73461-62-8
Publication statusPublished - 2009
EventSAFE 2009 - Veldhoven, The Netherlands
Duration: 26 Dec 200927 Dec 2009

Publication series

Name
PublisherSTW

Conference

ConferenceSAFE 2009
Period26/12/0927/12/09

Keywords

  • Elektrotechniek
  • Techniek
  • Vakpubl., Overig wet. > 3 pag

Cite this

Biasotto, C., Jovanovic, V., Nanver, LK., & van der Cingel, J. (2009). Downscaling of Al/Si-gate MOSFETs with Self-Aligned Laser Annealed Source/Drain Junctions. In PJ. French (Ed.), Proc. of SAFE 2009 (pp. 189-192). STW.