Downscaling of Al/Si-gate MOSFETs with Self-Aligned Laser Annealed Source/Drain Junctions

C Biasotto, V Jovanovic, LK Nanver, J van der Cingel

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Professional

Original language	Undefined/Unknown
Title of host publication	Proc. of SAFE 2009
Editors	PJ French
Place of Publication	Veldhoven, the Netherlands
Publisher	STW
Pages	189-192
Number of pages	4
ISBN (Print)	978-90-73461-62-8
Publication status	Published - 2009
Event	SAFE 2009 - Veldhoven, The Netherlands Duration: 26 Dec 2009 → 27 Dec 2009

Name
Publisher	STW

Conference	SAFE 2009
Period	26/12/09 → 27/12/09

Keywords

@inproceedings{62c51b21be604628b69c537c38fff979,

title = "Downscaling of Al/Si-gate MOSFETs with Self-Aligned Laser Annealed Source/Drain Junctions",

keywords = "Elektrotechniek, Techniek, Vakpubl., Overig wet. > 3 pag",

author = "C Biasotto and V Jovanovic and LK Nanver and {van der Cingel}, J",

year = "2009",

language = "Undefined/Unknown",

isbn = "978-90-73461-62-8",

publisher = "STW",

pages = "189--192",

editor = "PJ French",

booktitle = "Proc. of SAFE 2009",

note = "SAFE 2009 ; Conference date: 26-12-2009 Through 27-12-2009",

}

TY - GEN

T1 - Downscaling of Al/Si-gate MOSFETs with Self-Aligned Laser Annealed Source/Drain Junctions

AU - Biasotto, C

AU - Jovanovic, V

AU - Nanver, LK

AU - van der Cingel, J

PY - 2009

Y1 - 2009

KW - Elektrotechniek

KW - Techniek

KW - Vakpubl., Overig wet. > 3 pag

M3 - Conference contribution

SN - 978-90-73461-62-8

SP - 189

EP - 192

BT - Proc. of SAFE 2009

A2 - French, PJ

PB - STW

CY - Veldhoven, the Netherlands

T2 - SAFE 2009

Y2 - 26 December 2009 through 27 December 2009

ER -