Drain current modulation in a nanoscale field-effect transistor channel by single dopant implantation

B.C. Johnson, GC Tettamanzi, A.D.C. alves, S Thompson, C Yang, J Verduijn, JA Mol, R. Wacquez, M. Vinet, M. Sanquer, S Rogge, DN Jamieson

    Research output: Contribution to journalArticleScientificpeer-review

    22 Citations (Scopus)
    Original languageEnglish
    JournalApplied Physics Letters
    Volume96
    Issue number264102
    Publication statusPublished - 2010

    Keywords

    • CWTS 0.75 <= JFIS < 2.00

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