Drain current modulation in a nanoscale field-effect transistor channel by single dopant implantation

B.C. Johnson; GC Tettamanzi; A.D.C. alves; S Thompson; C Yang; J Verduijn; JA Mol; R. Wacquez; M. Vinet; M. Sanquer; S Rogge; DN Jamieson

Drain current modulation in a nanoscale field-effect transistor channel by single dopant implantation

B.C. Johnson, GC Tettamanzi, A.D.C. alves, S Thompson, C Yang, J Verduijn, JA Mol, R. Wacquez, M. Vinet, M. Sanquer, S Rogge, DN Jamieson

Research output: Contribution to journal › Article › Scientific › peer-review

25 Citations (Scopus)

Original language	English
Journal	Applied Physics Letters
Volume	96
Issue number	264102
Publication status	Published - 2010

Keywords

CWTS 0.75 <= JFIS < 2.00

Cite this

@article{9a32dd3c492646f68d29cdc3f68c1791,

title = "Drain current modulation in a nanoscale field-effect transistor channel by single dopant implantation",

keywords = "CWTS 0.75 <= JFIS < 2.00",

author = "B.C. Johnson and GC Tettamanzi and A.D.C. alves and S Thompson and C Yang and J Verduijn and JA Mol and R. Wacquez and M. Vinet and M. Sanquer and S Rogge and DN Jamieson",

year = "2010",

language = "English",

volume = "96",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "264102",

}

TY - JOUR

T1 - Drain current modulation in a nanoscale field-effect transistor channel by single dopant implantation

AU - Johnson, B.C.

AU - Tettamanzi, GC

AU - alves, A.D.C.

AU - Thompson, S

AU - Yang, C

AU - Verduijn, J

AU - Mol, JA

AU - Wacquez, R.

AU - Vinet, M.

AU - Sanquer, M.

AU - Rogge, S

AU - Jamieson, DN

PY - 2010

Y1 - 2010

KW - CWTS 0.75 <= JFIS < 2.00

M3 - Article

SN - 0003-6951

VL - 96

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 264102

ER -