Dual-Polarized Double-Slot Lens Antenna with Low Cross-Polarization at 300GHz in 90nm SiGe-BiCMOS

To fulfill the throughput requirement of future wireless systems, polarization diversity can be an important tool to boost the network’s capacity. In this context, dual-polarized antennas with high isolation and low levels of cross-polarization are desirable at THz frequencies. This contribution presents a dual-polarized double-slot antenna operating at 300 GHz and implemented in a 90 nm SiGe BiCMOS process. The antenna’s feeding enables integration with differential circuit topologies, avoiding the need for single-ended to differential baluns and their associated losses. Simulation results show high isolation (<50 dB), low levels of cross-polarization (<-24 dB), good matching (<-15 dB) and reasonable radiation efficiency (>53%) in the 250-320 GHz band which has been proposed for wireless communications. These performance metrics make this antenna a suitable candidate for wireless communication systems at THz frequencies.