Edge transport in the trivial phase of InAs/GaSb

Fabrizio Nichele, Henri J. Suominen, Morten Kjaergaard, Charles M. Marcus, Ebrahim Sajadi, Joshua A. Folk, Fanming Qu, Arjan J.A. Beukman, Folkert K.De Vries, Jasper Van Veen, Stevan Nadj-Perge, Leo P. Kouwenhoven, More Authors

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We present transport and scanning SQUID measurements on InAs/GaSb double quantum wells, a system predicted to be a two-dimensional topological insulator. Top and back gates allow independent control of density and band offset, allowing tuning from the trivial to the topological regime. In the trivial regime, bulk conductivity is quenched but transport persists along the edges, superficially resembling the predicted helical edge-channels in the topological regime. We characterize edge conduction in the trivial regime in a wide variety of sample geometries and measurement configurations, as a function of temperature, magnetic field, and edge length. Despite similarities to studies claiming measurements of helical edge channels, our characterization points to a non-topological origin for these observations.

Original languageEnglish
Article number083005
JournalNew Journal of Physics
Issue number8
Publication statusPublished - 2016


  • Quantum spin Hall effect
  • Scanning SQUID
  • Topological insulator


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