Effect of a gate bias voltage on quantum dots in single-walled carbon nanotubes

JR Kim, BK Kim, SR Kim, JJ Kim, JO Lee, J Kim

Research output: Contribution to journal › Article › Scientific › peer-review

Original language	Undefined/Unknown
Pages (from-to)	1694-1698
Number of pages	5
Journal	Korean Physical Society. Journal
Volume	49
Publication status	Published - 2006

Keywords

@article{d730679e6fb04f1fb2b38c1f3e5e7265,

title = "Effect of a gate bias voltage on quantum dots in single-walled carbon nanotubes",

keywords = "academic journal papers, CWTS JFIS < 0.75",

author = "JR Kim and BK Kim and SR Kim and JJ Kim and JO Lee and J Kim",

year = "2006",

language = "Undefined/Unknown",

volume = "49",

pages = "1694--1698",

journal = "Korean Physical Society. Journal",

issn = "0374-4884",

publisher = "Korean Physical Society",

}

TY - JOUR

T1 - Effect of a gate bias voltage on quantum dots in single-walled carbon nanotubes

AU - Kim, JR

AU - Kim, BK

AU - Kim, SR

AU - Kim, JJ

AU - Lee, JO

AU - Kim, J

PY - 2006

Y1 - 2006

KW - academic journal papers

KW - CWTS JFIS < 0.75

M3 - Article

SN - 0374-4884

VL - 49

SP - 1694

EP - 1698

JO - Korean Physical Society. Journal

JF - Korean Physical Society. Journal

ER -