Effect of density on microwave-induced resistance oscillations in back-gated GaAs quantum wells

X. Fu, M. D. Borisov, M. A. Zudov*, Q. Qian, J. D. Watson, M. J. Manfra

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

1 Citation (Scopus)

Abstract

We report on microwave-induced resistance oscillations (MIROs) in a tunable-density 30-nm-wide GaAs/AlGaAs quantum well. We find that the MIRO amplitude increases dramatically with carrier density. Our analysis shows that the anticipated increase in the effective microwave power and quantum lifetime with density is not sufficient to explain the observed growth of the amplitude. We further observe that the fundamental oscillation extrema move towards cyclotron resonance with increasing density, which also contradicts theoretical predictions. These findings reveal that the density dependence is not properly captured by existing theories, calling for further studies.

Original languageEnglish
Article number121303
Number of pages5
JournalPhysical Review B
Volume98
Issue number12
DOIs
Publication statusPublished - 2018
Externally publishedYes

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