INIS
transistors
100%
excimer lasers
100%
annealing
100%
hybrids
100%
passivation
100%
layers
100%
thin films
100%
solutions
100%
substrates
25%
heat
25%
low temperature
16%
simulation
16%
lasers
8%
very low temperature
8%
voltage
8%
high temperature
8%
mobility
8%
Keyphrases
Excimer Laser Annealing
100%
Amorphous InGaZnO (a-IGZO)
100%
Solution Process
100%
Hybrid Passivation
100%
Passivation Layer
100%
Thin-film Transistors
100%
InGaZnO Thin-film Transistors
42%
Low-temperature Annealing
28%
Heat Simulation
28%
Threshold Voltage
14%
Flexible Materials
14%
Mobility Improvement
14%
XeCl
14%
Heat Localization
14%
Extremely Low Temperature
14%
Site Analysis
14%
Engineering
Annealing
100%
Excimer Laser
100%
Thin-Film Transistor
100%
Hybrid
100%
Passivation Layer
100%
Low-Temperature
42%
Substrate Temperature
28%
High Temperature
28%
Two Dimensional
28%
Localization
14%
Characteristics
14%
Substrates
14%
Voltage
14%
Material Science
Laser
100%
Thin-Film Transistor
100%
Annealing
100%
Temperature
87%
Amorphous Material
50%
Materials
12%
Electrical Property
12%
Earth and Planetary Sciences