Effect of ion bombardment on the a-Si:H based surface passivation of c-Si surfaces

A Illiberi; P Kudlacek; AHM Smets; M Creatore; MCM van de Sanden

doi:10.1063/1.3601485

Effect of ion bombardment on the a-Si:H based surface passivation of c-Si surfaces

A Illiberi, P Kudlacek, AHM Smets, M Creatore, MCM van de Sanden

Photovoltaic Materials and Devices

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Abstract

We have found that controlled Ar ion bombardment enhances the degradation of a-Si:H based surface passivation of c-Si surfaces. The decrease in the level of surface passivation is found to be independent on the ion kinetic energy (7¿70 eV), but linearly proportional to the ion flux (6×1014¿6×1015¿ions¿cm¿2¿s¿1). This result suggests that the ion flux determines the generation rate of electron¿hole pairs in a-Si:H films, by which metastable defects are created at the H/a-Si:c-Si interface. Possible mechanisms for the ion induced generation of electron¿hole pairs are discussed.

Original language	English
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	98
Issue number	24
DOIs	https://doi.org/10.1063/1.3601485
Publication status	Published - 2011

Keywords

academic journal papers
CWTS 0.75 <= JFIS < 2.00

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10.1063/1.3601485

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@article{dc5ed93865e24c9a8117a63d6d7a5323,

title = "Effect of ion bombardment on the a-Si:H based surface passivation of c-Si surfaces",

abstract = "We have found that controlled Ar ion bombardment enhances the degradation of a-Si:H based surface passivation of c-Si surfaces. The decrease in the level of surface passivation is found to be independent on the ion kinetic energy (7¿70 eV), but linearly proportional to the ion flux (6×1014¿6×1015¿ions¿cm¿2¿s¿1). This result suggests that the ion flux determines the generation rate of electron¿hole pairs in a-Si:H films, by which metastable defects are created at the H/a-Si:c-Si interface. Possible mechanisms for the ion induced generation of electron¿hole pairs are discussed.",

keywords = "academic journal papers, CWTS 0.75 <= JFIS < 2.00",

author = "A Illiberi and P Kudlacek and AHM Smets and M Creatore and {van de Sanden}, MCM",

year = "2011",

doi = "10.1063/1.3601485",

language = "English",

volume = "98",

pages = "1--3",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "24",

}

TY - JOUR

T1 - Effect of ion bombardment on the a-Si:H based surface passivation of c-Si surfaces

AU - Illiberi, A

AU - Kudlacek, P

AU - Smets, AHM

AU - Creatore, M

AU - van de Sanden, MCM

PY - 2011

Y1 - 2011

N2 - We have found that controlled Ar ion bombardment enhances the degradation of a-Si:H based surface passivation of c-Si surfaces. The decrease in the level of surface passivation is found to be independent on the ion kinetic energy (7¿70 eV), but linearly proportional to the ion flux (6×1014¿6×1015¿ions¿cm¿2¿s¿1). This result suggests that the ion flux determines the generation rate of electron¿hole pairs in a-Si:H films, by which metastable defects are created at the H/a-Si:c-Si interface. Possible mechanisms for the ion induced generation of electron¿hole pairs are discussed.

AB - We have found that controlled Ar ion bombardment enhances the degradation of a-Si:H based surface passivation of c-Si surfaces. The decrease in the level of surface passivation is found to be independent on the ion kinetic energy (7¿70 eV), but linearly proportional to the ion flux (6×1014¿6×1015¿ions¿cm¿2¿s¿1). This result suggests that the ion flux determines the generation rate of electron¿hole pairs in a-Si:H films, by which metastable defects are created at the H/a-Si:c-Si interface. Possible mechanisms for the ion induced generation of electron¿hole pairs are discussed.

KW - academic journal papers

KW - CWTS 0.75 <= JFIS < 2.00

U2 - 10.1063/1.3601485

DO - 10.1063/1.3601485

M3 - Article

VL - 98

SP - 1

EP - 3

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 24

ER -

Effect of ion bombardment on the a-Si:H based surface passivation of c-Si surfaces

Abstract

Keywords

UN SDGs

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