Effect of ion bombardment on the a-Si:H based surface passivation of c-Si surfaces

A Illiberi; P Kudlacek; AHM Smets; M Creatore; MCM van de Sanden

doi:10.1063/1.3601485

Effect of ion bombardment on the a-Si:H based surface passivation of c-Si surfaces

A Illiberi
, P Kudlacek
, AHM Smets
, M Creatore
, MCM van de Sanden

Photovoltaic Materials and Devices

Research output: Contribution to journal › Article › Scientific › peer-review

45 Citations (Scopus)

Abstract

We have found that controlled Ar ion bombardment enhances the degradation of a-Si:H based surface passivation of c-Si surfaces. The decrease in the level of surface passivation is found to be independent on the ion kinetic energy (7¿70 eV), but linearly proportional to the ion flux (6×1014¿6×1015¿ions¿cm¿2¿s¿1). This result suggests that the ion flux determines the generation rate of electron¿hole pairs in a-Si:H films, by which metastable defects are created at the H/a-Si:c-Si interface. Possible mechanisms for the ion induced generation of electron¿hole pairs are discussed.

Original language	English
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	98
Issue number	24
DOIs	https://doi.org/10.1063/1.3601485
Publication status	Published - 2011

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academic journal papers
CWTS 0.75 <= JFIS < 2.00

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10.1063/1.3601485

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title = "Effect of ion bombardment on the a-Si:H based surface passivation of c-Si surfaces",

abstract = "We have found that controlled Ar ion bombardment enhances the degradation of a-Si:H based surface passivation of c-Si surfaces. The decrease in the level of surface passivation is found to be independent on the ion kinetic energy (7¿70 eV), but linearly proportional to the ion flux (6×1014¿6×1015¿ions¿cm¿2¿s¿1). This result suggests that the ion flux determines the generation rate of electron¿hole pairs in a-Si:H films, by which metastable defects are created at the H/a-Si:c-Si interface. Possible mechanisms for the ion induced generation of electron¿hole pairs are discussed.",

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year = "2011",

doi = "10.1063/1.3601485",

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journal = "Applied Physics Letters",

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T1 - Effect of ion bombardment on the a-Si:H based surface passivation of c-Si surfaces

AU - Illiberi, A

AU - Kudlacek, P

AU - Smets, AHM

AU - Creatore, M

AU - van de Sanden, MCM

PY - 2011

Y1 - 2011

N2 - We have found that controlled Ar ion bombardment enhances the degradation of a-Si:H based surface passivation of c-Si surfaces. The decrease in the level of surface passivation is found to be independent on the ion kinetic energy (7¿70 eV), but linearly proportional to the ion flux (6×1014¿6×1015¿ions¿cm¿2¿s¿1). This result suggests that the ion flux determines the generation rate of electron¿hole pairs in a-Si:H films, by which metastable defects are created at the H/a-Si:c-Si interface. Possible mechanisms for the ion induced generation of electron¿hole pairs are discussed.

AB - We have found that controlled Ar ion bombardment enhances the degradation of a-Si:H based surface passivation of c-Si surfaces. The decrease in the level of surface passivation is found to be independent on the ion kinetic energy (7¿70 eV), but linearly proportional to the ion flux (6×1014¿6×1015¿ions¿cm¿2¿s¿1). This result suggests that the ion flux determines the generation rate of electron¿hole pairs in a-Si:H films, by which metastable defects are created at the H/a-Si:c-Si interface. Possible mechanisms for the ion induced generation of electron¿hole pairs are discussed.

KW - academic journal papers

KW - CWTS 0.75 <= JFIS < 2.00

U2 - 10.1063/1.3601485

DO - 10.1063/1.3601485

M3 - Article

SN - 0003-6951

VL - 98

SP - 1

EP - 3

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 24

ER -

Effect of ion bombardment on the a-Si:H based surface passivation of c-Si surfaces

Abstract

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