Effects of amorphous Si capping layer on sputtered BaSi2 film properties

Research output: Chapter in Book/Conference proceedings/Edited volumeConference contributionScientificpeer-review

10 Downloads (Pure)

Abstract

Regarded as a promising absorber material for solar cell applications, Barium disilicide (BaSi2) is still confronted with issues related to surface oxidation. Here, we use a-Si.H deposited by plasma-enhanced chemical vapor deposition as capping layer to prevent surface oxidation of sputtered BaSi2 films. Based on crystalline quality and optical properties characterizations, thin a-Si.H capping cannot sufficiently prevent surface oxidation. Conversely, oxidation of a-Si.H layer in turn promotes Ba diffusion and Si isolation. Applying a thicker a-Si.H capping layer (more than 20 nm) can suppress such effect. The multi-materials capping layer can also be regarded as potential strategy to prevent surface oxidation of BaSi2.

Original languageEnglish
Title of host publicationASDAM 2018 - Proceedings
Subtitle of host publication12th International Conference on Advanced Semiconductor Devices and Microsystems
EditorsDaniel Donoval, Juraj Breza, Erik Vavrinsky
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Number of pages4
ISBN (Electronic)978-153867488-8
DOIs
Publication statusPublished - 2018
Event12th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2018 - Smolenice, Slovakia
Duration: 21 Oct 201824 Oct 2018

Conference

Conference12th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2018
CountrySlovakia
CitySmolenice
Period21/10/1824/10/18

Fingerprint

Dive into the research topics of 'Effects of amorphous Si capping layer on sputtered BaSi2 film properties'. Together they form a unique fingerprint.

Cite this