Effects of amorphous Si capping layer on sputtered BaSi2 film properties

Yilei Tian; Ana Montes; Olindo Isabella; Miro Zeman

doi:10.1109/ASDAM.2018.8544670

Effects of amorphous Si capping layer on sputtered BaSi2 film properties

Yilei Tian, Ana Montes, Olindo Isabella, Miro Zeman

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

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Abstract

Regarded as a promising absorber material for solar cell applications, Barium disilicide (BaSi2) is still confronted with issues related to surface oxidation. Here, we use a-Si.H deposited by plasma-enhanced chemical vapor deposition as capping layer to prevent surface oxidation of sputtered BaSi2 films. Based on crystalline quality and optical properties characterizations, thin a-Si.H capping cannot sufficiently prevent surface oxidation. Conversely, oxidation of a-Si.H layer in turn promotes Ba diffusion and Si isolation. Applying a thicker a-Si.H capping layer (more than 20 nm) can suppress such effect. The multi-materials capping layer can also be regarded as potential strategy to prevent surface oxidation of BaSi2.

Original language	English
Title of host publication	ASDAM 2018 - Proceedings
Subtitle of host publication	12th International Conference on Advanced Semiconductor Devices and Microsystems
Editors	Daniel Donoval, Juraj Breza, Erik Vavrinsky
Publisher	IEEE
Number of pages	4
ISBN (Electronic)	978-153867488-8
DOIs	https://doi.org/10.1109/ASDAM.2018.8544670
Publication status	Published - 2018
Event	12th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2018 - Smolenice, Slovakia Duration: 21 Oct 2018 → 24 Oct 2018

Conference

Conference	12th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2018
Country/Territory	Slovakia
City	Smolenice
Period	21/10/18 → 24/10/18

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10.1109/ASDAM.2018.8544670

ASDAM_2018_Yilei TianAccepted author manuscript, 789 KB

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title = "Effects of amorphous Si capping layer on sputtered BaSi2 film properties",

abstract = "Regarded as a promising absorber material for solar cell applications, Barium disilicide (BaSi2) is still confronted with issues related to surface oxidation. Here, we use a-Si.H deposited by plasma-enhanced chemical vapor deposition as capping layer to prevent surface oxidation of sputtered BaSi2 films. Based on crystalline quality and optical properties characterizations, thin a-Si.H capping cannot sufficiently prevent surface oxidation. Conversely, oxidation of a-Si.H layer in turn promotes Ba diffusion and Si isolation. Applying a thicker a-Si.H capping layer (more than 20 nm) can suppress such effect. The multi-materials capping layer can also be regarded as potential strategy to prevent surface oxidation of BaSi2.",

author = "Yilei Tian and Ana Montes and Olindo Isabella and Miro Zeman",

year = "2018",

doi = "10.1109/ASDAM.2018.8544670",

language = "English",

editor = "Daniel Donoval and Juraj Breza and Erik Vavrinsky",

booktitle = "ASDAM 2018 - Proceedings",

publisher = "IEEE",

address = "United States",

note = "12th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2018 ; Conference date: 21-10-2018 Through 24-10-2018",

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Tian, Y, Montes, A, Isabella, O & Zeman, M 2018, Effects of amorphous Si capping layer on sputtered BaSi2 film properties. in D Donoval, J Breza & E Vavrinsky (eds), ASDAM 2018 - Proceedings: 12th International Conference on Advanced Semiconductor Devices and Microsystems., 8544670, IEEE, 12th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2018, Smolenice, Slovakia, 21/10/18. https://doi.org/10.1109/ASDAM.2018.8544670

Effects of amorphous Si capping layer on sputtered BaSi2 film properties. / Tian, Yilei; Montes, Ana; Isabella, Olindo et al.
ASDAM 2018 - Proceedings: 12th International Conference on Advanced Semiconductor Devices and Microsystems. ed. / Daniel Donoval; Juraj Breza; Erik Vavrinsky. IEEE, 2018. 8544670.

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

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T1 - Effects of amorphous Si capping layer on sputtered BaSi2 film properties

AU - Tian, Yilei

AU - Montes, Ana

AU - Isabella, Olindo

AU - Zeman, Miro

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N2 - Regarded as a promising absorber material for solar cell applications, Barium disilicide (BaSi2) is still confronted with issues related to surface oxidation. Here, we use a-Si.H deposited by plasma-enhanced chemical vapor deposition as capping layer to prevent surface oxidation of sputtered BaSi2 films. Based on crystalline quality and optical properties characterizations, thin a-Si.H capping cannot sufficiently prevent surface oxidation. Conversely, oxidation of a-Si.H layer in turn promotes Ba diffusion and Si isolation. Applying a thicker a-Si.H capping layer (more than 20 nm) can suppress such effect. The multi-materials capping layer can also be regarded as potential strategy to prevent surface oxidation of BaSi2.

AB - Regarded as a promising absorber material for solar cell applications, Barium disilicide (BaSi2) is still confronted with issues related to surface oxidation. Here, we use a-Si.H deposited by plasma-enhanced chemical vapor deposition as capping layer to prevent surface oxidation of sputtered BaSi2 films. Based on crystalline quality and optical properties characterizations, thin a-Si.H capping cannot sufficiently prevent surface oxidation. Conversely, oxidation of a-Si.H layer in turn promotes Ba diffusion and Si isolation. Applying a thicker a-Si.H capping layer (more than 20 nm) can suppress such effect. The multi-materials capping layer can also be regarded as potential strategy to prevent surface oxidation of BaSi2.

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DO - 10.1109/ASDAM.2018.8544670

M3 - Conference contribution

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BT - ASDAM 2018 - Proceedings

A2 - Donoval, Daniel

A2 - Breza, Juraj

A2 - Vavrinsky, Erik

PB - IEEE

T2 - 12th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2018

Y2 - 21 October 2018 through 24 October 2018

ER -

Effects of amorphous Si capping layer on sputtered BaSi2 film properties

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