Abstract
We investigate the effects of parasitic resistance on the performance of silicon avalanche photodetectors (APDs) fabricated in the standard complementary metal-oxide-semiconductor (CMOS) technology. Two types of CMOS-APDs based on the P+/N-well junction having two different parasitic resistances are realized, and their current-voltage characteristics, responsivities, avalanche gains, photodetection frequency responses, and electrical reflection coefficients are measured and compared. In addition, the effect of parasitic resistance on the photodetection bandwidth is analyzed with an equivalent circuit model. It is clearly demonstrated that the parasitic resistance has great effects on the gain and photodetection bandwidth of CMOS-APDs.
Original language | English |
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Pages (from-to) | 60-63 |
Number of pages | 4 |
Journal | IEEE Electron Device Letters |
Volume | 37 |
Issue number | 1 |
DOIs | |
Publication status | Published - 30 Oct 2015 |
Keywords
- Avalanche gain,
- avalanche photodetector (APD)
- avalanche photodiode
- CMOS integrated circuits
- equivalent circuit model
- image sensor
- inductive peaking
- integrated circuit modeling
- optical interconnect
- parasitic resistance
- photodetection bandwidth
- photodiode