Effects of Parasitic Resistance on the Performance of Silicon Avalanche Photodetectors in Standard CMOS Technology

MJ Lee, Woo-Young Choi

Research output: Contribution to journalArticleScientificpeer-review

9 Citations (Scopus)

Abstract

We investigate the effects of parasitic resistance on the performance of silicon avalanche photodetectors (APDs) fabricated in the standard complementary metal-oxide-semiconductor (CMOS) technology. Two types of CMOS-APDs based on the P+/N-well junction having two different parasitic resistances are realized, and their current-voltage characteristics, responsivities, avalanche gains, photodetection frequency responses, and electrical reflection coefficients are measured and compared. In addition, the effect of parasitic resistance on the photodetection bandwidth is analyzed with an equivalent circuit model. It is clearly demonstrated that the parasitic resistance has great effects on the gain and photodetection bandwidth of CMOS-APDs.
Original languageEnglish
Pages (from-to)60-63
Number of pages4
JournalIEEE Electron Device Letters
Volume37
Issue number1
DOIs
Publication statusPublished - 30 Oct 2015

Keywords

  • Avalanche gain,
  • avalanche photodetector (APD)
  • avalanche photodiode
  • CMOS integrated circuits
  • equivalent circuit model
  • image sensor
  • inductive peaking
  • integrated circuit modeling
  • optical interconnect
  • parasitic resistance
  • photodetection bandwidth
  • photodiode

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