Effects of silicon via profile on passivation and metallization in TSV interposers for 2.5D integration

P Lin, GQ Zhang, HW van Zeijl, BH Lian, Y Wang, QB Yao

Research output: Contribution to journal › Article › Scientific › peer-review

17 Citations (SciVal)

Original language	English
Pages (from-to)	22-26
Number of pages	5
Journal	Microelectronic Engineering
Volume	134
DOIs	https://doi.org/10.1016/j.mee.2015.01.008
Publication status	Published - 2015

Harvest
Available online 14-1-2015

Access to Document

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title = "Effects of silicon via profile on passivation and metallization in TSV interposers for 2.5D integration",

author = "P Lin and GQ Zhang and {van Zeijl}, HW and BH Lian and Y Wang and QB Yao",

note = "Harvest Available online 14-1-2015",

year = "2015",

doi = "10.1016/j.mee.2015.01.008",

language = "English",

volume = "134",

pages = "22--26",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier",

}

TY - JOUR

T1 - Effects of silicon via profile on passivation and metallization in TSV interposers for 2.5D integration

AU - Lin, P

AU - Zhang, GQ

AU - van Zeijl, HW

AU - Lian, BH

AU - Wang, Y

AU - Yao, QB

N1 - Harvest Available online 14-1-2015

PY - 2015

Y1 - 2015

U2 - 10.1016/j.mee.2015.01.008

DO - 10.1016/j.mee.2015.01.008

M3 - Article

SN - 0167-9317

VL - 134

SP - 22

EP - 26

JO - Microelectronic Engineering

JF - Microelectronic Engineering

ER -