Effects of the SiO2 capping layer on the location-controlled Si grain by u-Czochralski (grain filter) process with excimer-laser

M He; R Ishihara; Y Hiroshima; S Inoue; T Shimoda; JW Metselaar; CIM Beenakker

Effects of the SiO2 capping layer on the location-controlled Si grain by u-Czochralski (grain filter) process with excimer-laser

M He, R Ishihara, Y Hiroshima, S Inoue, T Shimoda, JW Metselaar, CIM Beenakker

Electronic Components, Technology and Materials

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific

Original language	Undefined/Unknown
Title of host publication	Proceedings of the 11th International Display Workshops (IDW '04)
Editors	T Uchida, T Sugiura, Y Shimodaira
Place of Publication	Niigata
Publisher	ITE and SID
Pages	395-398
Number of pages	4
Publication status	Published - 2004
Event	11th International Display Workshops, Niigata, Japan - Niigata Duration: 8 Dec 2004 → 10 Dec 2004

Publication series

Name
Publisher	ITE and SID

Conference

Conference	11th International Display Workshops, Niigata, Japan
Period	8/12/04 → 10/12/04

Keywords

Conf.proc. > 3 pag

Cite this

He, M., Ishihara, R., Hiroshima, Y., Inoue, S., Shimoda, T., Metselaar, JW., & Beenakker, CIM. (2004). Effects of the SiO2 capping layer on the location-controlled Si grain by u-Czochralski (grain filter) process with excimer-laser. In T. Uchida, T. Sugiura, & Y. Shimodaira (Eds.), Proceedings of the 11th International Display Workshops (IDW '04) (pp. 395-398). ITE and SID.

@inproceedings{96b7b2e95f864388bc829054a4564f17,

title = "Effects of the SiO2 capping layer on the location-controlled Si grain by u-Czochralski (grain filter) process with excimer-laser",

keywords = "Conf.proc. > 3 pag",

author = "M He and R Ishihara and Y Hiroshima and S Inoue and T Shimoda and JW Metselaar and CIM Beenakker",

year = "2004",

language = "Undefined/Unknown",

publisher = "ITE and SID",

pages = "395--398",

editor = "T Uchida and T Sugiura and Y Shimodaira",

booktitle = "Proceedings of the 11th International Display Workshops (IDW '04)",

note = "11th International Display Workshops, Niigata, Japan ; Conference date: 08-12-2004 Through 10-12-2004",

}

He, M, Ishihara, R, Hiroshima, Y, Inoue, S, Shimoda, T, Metselaar, JW & Beenakker, CIM 2004, Effects of the SiO2 capping layer on the location-controlled Si grain by u-Czochralski (grain filter) process with excimer-laser. in T Uchida, T Sugiura & Y Shimodaira (eds), Proceedings of the 11th International Display Workshops (IDW '04). ITE and SID, Niigata, pp. 395-398, 11th International Display Workshops, Niigata, Japan, 8/12/04.

Effects of the SiO2 capping layer on the location-controlled Si grain by u-Czochralski (grain filter) process with excimer-laser. / He, M; Ishihara, R; Hiroshima, Y et al.
Proceedings of the 11th International Display Workshops (IDW '04). ed. / T Uchida; T Sugiura; Y Shimodaira. Niigata: ITE and SID, 2004. p. 395-398.

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific

TY - GEN

T1 - Effects of the SiO2 capping layer on the location-controlled Si grain by u-Czochralski (grain filter) process with excimer-laser

AU - He, M

AU - Ishihara, R

AU - Hiroshima, Y

AU - Inoue, S

AU - Shimoda, T

AU - Metselaar, JW

AU - Beenakker, CIM

PY - 2004

Y1 - 2004

KW - Conf.proc. > 3 pag

M3 - Conference contribution

SP - 395

EP - 398

BT - Proceedings of the 11th International Display Workshops (IDW '04)

A2 - Uchida, T

A2 - Sugiura, T

A2 - Shimodaira, Y

PB - ITE and SID

CY - Niigata

T2 - 11th International Display Workshops, Niigata, Japan

Y2 - 8 December 2004 through 10 December 2004

ER -