TY - JOUR
T1 - Efros-Shklovskii variable range hopping and nonlinear transport in 1T/1T′-MoS2
AU - Papadopoulos, N.
AU - Steele, G. A.
AU - Van Der Zant, H. S.J.
PY - 2017/12/26
Y1 - 2017/12/26
N2 - We have studied temperature- and electric-field-dependent carrier transport in single flakes of MoS2 treated with n-butyllithium. The temperature dependence of the four-terminal resistance follows the Efros-Shklovskii variable range hopping conduction mechanism. From measurements in the Ohmic and non-Ohmic regime, we estimate the localization length and the average hopping length of the carriers, as well as the effective dielectric constant. Furthermore, a comparison between two- and four-probe measurements yields a contact resistance that increases significantly with decreasing temperature.
AB - We have studied temperature- and electric-field-dependent carrier transport in single flakes of MoS2 treated with n-butyllithium. The temperature dependence of the four-terminal resistance follows the Efros-Shklovskii variable range hopping conduction mechanism. From measurements in the Ohmic and non-Ohmic regime, we estimate the localization length and the average hopping length of the carriers, as well as the effective dielectric constant. Furthermore, a comparison between two- and four-probe measurements yields a contact resistance that increases significantly with decreasing temperature.
UR - http://resolver.tudelft.nl/uuid:b3f3522b-2f83-474f-911e-cb1d9fd6c05b
UR - http://www.scopus.com/inward/record.url?scp=85039443203&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.96.235436
DO - 10.1103/PhysRevB.96.235436
M3 - Article
AN - SCOPUS:85039443203
SN - 1098-0121
VL - 96
JO - Physical Review B (Condensed Matter and Materials Physics)
JF - Physical Review B (Condensed Matter and Materials Physics)
IS - 23
M1 - 235436
ER -