Efros-Shklovskii variable range hopping and nonlinear transport in 1T/1T′-MoS2

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Abstract

We have studied temperature- and electric-field-dependent carrier transport in single flakes of MoS2 treated with n-butyllithium. The temperature dependence of the four-terminal resistance follows the Efros-Shklovskii variable range hopping conduction mechanism. From measurements in the Ohmic and non-Ohmic regime, we estimate the localization length and the average hopping length of the carriers, as well as the effective dielectric constant. Furthermore, a comparison between two- and four-probe measurements yields a contact resistance that increases significantly with decreasing temperature.

Original languageEnglish
Article number235436
Number of pages5
JournalPhysical Review B (Condensed Matter and Materials Physics)
Volume96
Issue number23
DOIs
Publication statusPublished - 26 Dec 2017

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