Electrical and optical characterization of MoS2 thin film transistors and the effect of strain on their performances

Zuopeng Qu; Hongyu Tang; H. Ye; Xuejun Fan; Guoqi Zhang

doi:10.1109/EuroSimE.2019.8724549

Electrical and optical characterization of MoS₂ thin film transistors and the effect of strain on their performances

Zuopeng Qu, Hongyu Tang^*, H. Ye, Xuejun Fan, Guoqi Zhang

^*Corresponding author for this work

Electronic Components, Technology and Materials

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

Abstract

Two-dimensional transition-metal dichalcogenides (TMDCs) such as MoS₂ are potential channel materials for thin film transistor. Here, we report the effects of strain on the performance of the back-gated few-layer MoS₂ thin film transistors (FL-MoS₂ TFTs) with poly(acrylic acid) (PAA) dielectric layer. The devices exhibit high on/off ratio of 5600 and mobility of 7.07 cm/Vs. The electrical and optical characterizations were affected by the strain under bending conditions. The results show that the device exhibits quite stable mobility and photoswitching behavior under different bending radius, which is owing to the high deformability of MoS₂ and PAA dielectric layer. Big bending radius enable improved photoresponsitivity due to the change of band gap of MoS₂. The excellent bending performance of FL-MoS₂ transistor presents potential applications in flexible and wearable electronics and optoelectronics.

Original language	English
Title of host publication	2019 20th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2019
Publisher	IEEE
Pages	1-5
Number of pages	5
ISBN (Electronic)	978-1-5386-8040-7
ISBN (Print)	978-1-5386-8041-4
DOIs	https://doi.org/10.1109/EuroSimE.2019.8724549
Publication status	Published - 1 Mar 2019
Event	20th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2019: 20th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems - Hannover, Germany Duration: 24 Mar 2019 → 27 Mar 2019 Conference number: 20th

Conference

Conference	20th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2019
Country/Territory	Germany
City	Hannover
Period	24/03/19 → 27/03/19

Keywords

MoS2
Optical
Strain
Thin film transistor (TFT)

Access to Document

10.1109/EuroSimE.2019.8724549

Cite this

Qu, Z., Tang, H., Ye, H., Fan, X., & Zhang, G. (2019). Electrical and optical characterization of MoS₂ thin film transistors and the effect of strain on their performances. In 2019 20th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2019 (pp. 1-5). Article 8724549 IEEE. https://doi.org/10.1109/EuroSimE.2019.8724549

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title = "Electrical and optical characterization of MoS2 thin film transistors and the effect of strain on their performances",

abstract = "Two-dimensional transition-metal dichalcogenides (TMDCs) such as MoS2 are potential channel materials for thin film transistor. Here, we report the effects of strain on the performance of the back-gated few-layer MoS2 thin film transistors (FL-MoS2 TFTs) with poly(acrylic acid) (PAA) dielectric layer. The devices exhibit high on/off ratio of 5600 and mobility of 7.07 cm/Vs. The electrical and optical characterizations were affected by the strain under bending conditions. The results show that the device exhibits quite stable mobility and photoswitching behavior under different bending radius, which is owing to the high deformability of MoS2 and PAA dielectric layer. Big bending radius enable improved photoresponsitivity due to the change of band gap of MoS2. The excellent bending performance of FL-MoS2 transistor presents potential applications in flexible and wearable electronics and optoelectronics.",

keywords = "MoS2, Optical, Strain, Thin film transistor (TFT)",

author = "Zuopeng Qu and Hongyu Tang and H. Ye and Xuejun Fan and Guoqi Zhang",

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note = "20th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2019 : 20th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems ; Conference date: 24-03-2019 Through 27-03-2019",

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Qu, Z, Tang, H, Ye, H , Fan, X & Zhang, G 2019, Electrical and optical characterization of MoS₂ thin film transistors and the effect of strain on their performances. in 2019 20th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2019., 8724549, IEEE, pp. 1-5, 20th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2019, Hannover, Germany, 24/03/19. https://doi.org/10.1109/EuroSimE.2019.8724549

Electrical and optical characterization of MoS₂ thin film transistors and the effect of strain on their performances. / Qu, Zuopeng; Tang, Hongyu; Ye, H. et al.
2019 20th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2019. IEEE, 2019. p. 1-5 8724549.

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

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T1 - Electrical and optical characterization of MoS2 thin film transistors and the effect of strain on their performances

AU - Qu, Zuopeng

AU - Tang, Hongyu

AU - Ye, H.

AU - Fan, Xuejun

AU - Zhang, Guoqi

N1 - Conference code: 20th

PY - 2019/3/1

Y1 - 2019/3/1

N2 - Two-dimensional transition-metal dichalcogenides (TMDCs) such as MoS2 are potential channel materials for thin film transistor. Here, we report the effects of strain on the performance of the back-gated few-layer MoS2 thin film transistors (FL-MoS2 TFTs) with poly(acrylic acid) (PAA) dielectric layer. The devices exhibit high on/off ratio of 5600 and mobility of 7.07 cm/Vs. The electrical and optical characterizations were affected by the strain under bending conditions. The results show that the device exhibits quite stable mobility and photoswitching behavior under different bending radius, which is owing to the high deformability of MoS2 and PAA dielectric layer. Big bending radius enable improved photoresponsitivity due to the change of band gap of MoS2. The excellent bending performance of FL-MoS2 transistor presents potential applications in flexible and wearable electronics and optoelectronics.

AB - Two-dimensional transition-metal dichalcogenides (TMDCs) such as MoS2 are potential channel materials for thin film transistor. Here, we report the effects of strain on the performance of the back-gated few-layer MoS2 thin film transistors (FL-MoS2 TFTs) with poly(acrylic acid) (PAA) dielectric layer. The devices exhibit high on/off ratio of 5600 and mobility of 7.07 cm/Vs. The electrical and optical characterizations were affected by the strain under bending conditions. The results show that the device exhibits quite stable mobility and photoswitching behavior under different bending radius, which is owing to the high deformability of MoS2 and PAA dielectric layer. Big bending radius enable improved photoresponsitivity due to the change of band gap of MoS2. The excellent bending performance of FL-MoS2 transistor presents potential applications in flexible and wearable electronics and optoelectronics.

KW - MoS2

KW - Optical

KW - Strain

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SN - 978-1-5386-8041-4

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BT - 2019 20th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2019

PB - IEEE

T2 - 20th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2019

Y2 - 24 March 2019 through 27 March 2019

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Qu Z, Tang H, Ye H , Fan X , Zhang G. Electrical and optical characterization of MoS₂ thin film transistors and the effect of strain on their performances. In 2019 20th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2019. IEEE. 2019. p. 1-5. 8724549 doi: 10.1109/EuroSimE.2019.8724549