Electrical Characterization of Residual Bulk Defects after Laser Annealing of Implanted Shallow Junctions

S Liu; V Gonda; TLM Scholtes; LK Nanver

Electrical Characterization of Residual Bulk Defects after Laser Annealing of Implanted Shallow Junctions

S Liu, V Gonda, TLM Scholtes, LK Nanver

Electronic Components, Technology and Materials

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

1 Citation (Scopus)

Original language	Undefined/Unknown
Title of host publication	Proc. IEEE International Workshop on Junctions Technology
Editors	s.n.
Place of Publication	Shanghai, China
Publisher	Electron Device Society
Pages	112-115
Number of pages	4
ISBN (Print)	1-4244-0047-3
Publication status	Published - 2006
Event	IEEE International WorkShop on Junction Technology - Shanghai, China Duration: 11 Jun 2006 → 12 Jun 2006

Publication series

Name
Publisher	Electron Device Society

Conference

Conference	IEEE International WorkShop on Junction Technology
Period	11/06/06 → 12/06/06

Keywords

conference contrib. refereed
Conf.proc. > 3 pag

Cite this

@inproceedings{d1c3022519a748eea97f53b074847652,

title = "Electrical Characterization of Residual Bulk Defects after Laser Annealing of Implanted Shallow Junctions",

keywords = "conference contrib. refereed, Conf.proc. > 3 pag",

author = "S Liu and V Gonda and TLM Scholtes and LK Nanver",

year = "2006",

language = "Undefined/Unknown",

isbn = "1-4244-0047-3",

publisher = "Electron Device Society",

pages = "112--115",

editor = "s.n.",

booktitle = "Proc. IEEE International Workshop on Junctions Technology",

note = "IEEE International WorkShop on Junction Technology ; Conference date: 11-06-2006 Through 12-06-2006",

}

Electrical Characterization of Residual Bulk Defects after Laser Annealing of Implanted Shallow Junctions. / Liu, S; Gonda, V; Scholtes, TLM et al.
Proc. IEEE International Workshop on Junctions Technology. ed. / s.n. Shanghai, China: Electron Device Society, 2006. p. 112-115.

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

TY - GEN

T1 - Electrical Characterization of Residual Bulk Defects after Laser Annealing of Implanted Shallow Junctions

AU - Liu, S

AU - Gonda, V

AU - Scholtes, TLM

AU - Nanver, LK

PY - 2006

Y1 - 2006

KW - conference contrib. refereed

KW - Conf.proc. > 3 pag

M3 - Conference contribution

SN - 1-4244-0047-3

SP - 112

EP - 115

BT - Proc. IEEE International Workshop on Junctions Technology

A2 - s.n., null

PB - Electron Device Society

CY - Shanghai, China

T2 - IEEE International WorkShop on Junction Technology

Y2 - 11 June 2006 through 12 June 2006

ER -