Electrical characterization of silicon diodes formed by laser annealing of implanted dopants

LK Nanver; JHCM Slabbekoorn; A Burtsev; TLM Scholtes; R Surdeanu; F Simonetti; HJ Kalhert; JW Slotboom

Electrical characterization of silicon diodes formed by laser annealing of implanted dopants

LK Nanver, JHCM Slabbekoorn, A Burtsev, TLM Scholtes, R Surdeanu, F Simonetti, HJ Kalhert, JW Slotboom

Electronic Components, Technology and Materials

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific

Original language	Undefined/Unknown
Title of host publication	Advanced short-time thermal processing for Si-based CMOS devices
Editors	F Roozeboom, E Gusev, LJ Chen, MC Ozturk, DL Kwong, PJ Timans
Place of Publication	Pennington, USA
Publisher	The Electrochemical Society
Pages	119-130
Number of pages	12
ISBN (Print)	1-56677-396-2
Publication status	Published - 2003
Event	The 203rd ECS meeting, Paris, France - Pennington, USA Duration: 27 Apr 2003 → 2 May 2003

Publication series

Name
Publisher	The Electrochemical Society

Conference

Conference	The 203rd ECS meeting, Paris, France
Period	27/04/03 → 2/05/03

Keywords

Elektrotechniek
Techniek
Conf.proc. > 3 pag

Cite this

Nanver, LK., Slabbekoorn, JHCM., Burtsev, A., Scholtes, TLM., Surdeanu, R., Simonetti, F., Kalhert, HJ., & Slotboom, JW. (2003). Electrical characterization of silicon diodes formed by laser annealing of implanted dopants. In F. Roozeboom, E. Gusev, LJ. Chen, MC. Ozturk, DL. Kwong, & PJ. Timans (Eds.), Advanced short-time thermal processing for Si-based CMOS devices (pp. 119-130). The Electrochemical Society.

@inproceedings{be627c7047a54266ae9137714d58c604,

title = "Electrical characterization of silicon diodes formed by laser annealing of implanted dopants",

keywords = "Elektrotechniek, Techniek, Conf.proc. > 3 pag",

author = "LK Nanver and JHCM Slabbekoorn and A Burtsev and TLM Scholtes and R Surdeanu and F Simonetti and HJ Kalhert and JW Slotboom",

year = "2003",

language = "Undefined/Unknown",

isbn = "1-56677-396-2",

publisher = "The Electrochemical Society",

pages = "119--130",

editor = "F Roozeboom and E Gusev and LJ Chen and MC Ozturk and DL Kwong and PJ Timans",

booktitle = "Advanced short-time thermal processing for Si-based CMOS devices",

note = "The 203rd ECS meeting, Paris, France ; Conference date: 27-04-2003 Through 02-05-2003",

}

Nanver, LK, Slabbekoorn, JHCM, Burtsev, A, Scholtes, TLM, Surdeanu, R, Simonetti, F, Kalhert, HJ & Slotboom, JW 2003, Electrical characterization of silicon diodes formed by laser annealing of implanted dopants. in F Roozeboom, E Gusev, LJ Chen, MC Ozturk, DL Kwong & PJ Timans (eds), Advanced short-time thermal processing for Si-based CMOS devices. The Electrochemical Society, Pennington, USA, pp. 119-130, The 203rd ECS meeting, Paris, France, 27/04/03.

Electrical characterization of silicon diodes formed by laser annealing of implanted dopants. / Nanver, LK; Slabbekoorn, JHCM; Burtsev, A et al.
Advanced short-time thermal processing for Si-based CMOS devices. ed. / F Roozeboom; E Gusev; LJ Chen; MC Ozturk; DL Kwong; PJ Timans. Pennington, USA: The Electrochemical Society, 2003. p. 119-130.

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific

TY - GEN

T1 - Electrical characterization of silicon diodes formed by laser annealing of implanted dopants

AU - Nanver, LK

AU - Slabbekoorn, JHCM

AU - Burtsev, A

AU - Scholtes, TLM

AU - Surdeanu, R

AU - Simonetti, F

AU - Kalhert, HJ

AU - Slotboom, JW

PY - 2003

Y1 - 2003

KW - Elektrotechniek

KW - Techniek

KW - Conf.proc. > 3 pag

M3 - Conference contribution

SN - 1-56677-396-2

SP - 119

EP - 130

BT - Advanced short-time thermal processing for Si-based CMOS devices

A2 - Roozeboom, F

A2 - Gusev, E

A2 - Chen, LJ

A2 - Ozturk, MC

A2 - Kwong, DL

A2 - Timans, PJ

PB - The Electrochemical Society

CY - Pennington, USA

T2 - The 203rd ECS meeting, Paris, France

Y2 - 27 April 2003 through 2 May 2003

ER -

Nanver LK, Slabbekoorn JHCM, Burtsev A, Scholtes TLM, Surdeanu R, Simonetti F et al. Electrical characterization of silicon diodes formed by laser annealing of implanted dopants. In Roozeboom F, Gusev E, Chen LJ, Ozturk MC, Kwong DL, Timans PJ, editors, Advanced short-time thermal processing for Si-based CMOS devices. Pennington, USA: The Electrochemical Society. 2003. p. 119-130