Electrical Control of Uniformity in Quantum Dot Devices

Marcel Meyer, Corentin Déprez, Timo R. van Abswoude, Ilja N. Meijer, Dingshan Liu, Chien An Wang, Saurabh Karwal, Stefan Oosterhout, Francesco Borsoi, Amir Sammak, Nico W. Hendrickx, Giordano Scappucci, Menno Veldhorst*

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

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Highly uniform quantum systems are essential for the practical implementation of scalable quantum processors. While quantum dot spin qubits based on semiconductor technology are a promising platform for large-scale quantum computing, their small size makes them particularly sensitive to their local environment. Here, we present a method to electrically obtain a high degree of uniformity in the intrinsic potential landscape using hysteretic shifts of the gate voltage characteristics. We demonstrate the tuning of pinch-off voltages in quantum dot devices over hundreds of millivolts that then remain stable at least for hours. Applying our method, we homogenize the pinch-off voltages of the plunger gates in a linear array for four quantum dots, reducing the spread in pinch-off voltages by one order of magnitude. This work provides a new tool for the tuning of quantum dot devices and offers new perspectives for the implementation of scalable spin qubit arrays.

Original languageEnglish
Pages (from-to)2522-2529
Number of pages8
JournalNano Letters
Issue number7
Publication statusPublished - 2023


  • hysteresis
  • quantum dot
  • spin qubit
  • uniformity


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