Electrical properties of epitaxially grown VOx thin films

A. D. Rata; A. R. Chezan; C. Presura; T. Hibma

doi:10.1016/S0039-6028(03)00096-7

Electrical properties of epitaxially grown VO_x thin films

A. D. Rata^*
, A. R. Chezan
, C. Presura
, T. Hibma

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › Scientific › peer-review

24 Citations (Scopus)

Abstract

High quality VO_x thin films on MgO(100) substrates were prepared and studied from the structural and electronic point of view. Epitaxial growth was confirmed by RHEED and XRD techniques. The oxygen content of VO_x thin films as a function of oxygen flux was determined using RBS. The upper and lower stoichiometry limit found are similar to the ones known for bulk material (0.8-1.3). Conductivity measurements have been performed to characterize the electronic structure of our films. Thin VO_x films showed mostly a semiconducting behavior. The resistivity was highly temperature and composition dependent and considerably larger than the resistivity of bulk material having the same composition. At low temperatures variable-range hopping conduction was observed, giving evidence for the presence of weak localization in VO_x.

Original language	English
Pages (from-to)	341-345
Number of pages	5
Journal	Surface Science
Volume	532-535
DOIs	https://doi.org/10.1016/S0039-6028(03)00096-7
Publication status	Published - 2003
Externally published	Yes
Event	Proceedings of the 7th International Conference on Nanometer - Malmo, Sweden Duration: 29 Aug 2002 → 31 Aug 2002

Keywords

Epitaxy
Semiconducting films
Vanadium oxide

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10.1016/S0039-6028(03)00096-7

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@article{04c285d00dac495fa7ebec8bc29b8752,

title = "Electrical properties of epitaxially grown VOx thin films",

abstract = "High quality VOx thin films on MgO(100) substrates were prepared and studied from the structural and electronic point of view. Epitaxial growth was confirmed by RHEED and XRD techniques. The oxygen content of VOx thin films as a function of oxygen flux was determined using RBS. The upper and lower stoichiometry limit found are similar to the ones known for bulk material (0.8-1.3). Conductivity measurements have been performed to characterize the electronic structure of our films. Thin VOx films showed mostly a semiconducting behavior. The resistivity was highly temperature and composition dependent and considerably larger than the resistivity of bulk material having the same composition. At low temperatures variable-range hopping conduction was observed, giving evidence for the presence of weak localization in VOx.",

keywords = "Epitaxy, Semiconducting films, Vanadium oxide",

author = "Rata, \{A. D.\} and Chezan, \{A. R.\} and C. Presura and T. Hibma",

year = "2003",

doi = "10.1016/S0039-6028(03)00096-7",

language = "English",

volume = "532-535",

pages = "341--345",

journal = "Surface Science",

issn = "0039-6028",

publisher = "Elsevier",

note = "Proceedings of the 7th International Conference on Nanometer ; Conference date: 29-08-2002 Through 31-08-2002",

}

TY - JOUR

T1 - Electrical properties of epitaxially grown VOx thin films

AU - Rata, A. D.

AU - Chezan, A. R.

AU - Presura, C.

AU - Hibma, T.

PY - 2003

Y1 - 2003

N2 - High quality VOx thin films on MgO(100) substrates were prepared and studied from the structural and electronic point of view. Epitaxial growth was confirmed by RHEED and XRD techniques. The oxygen content of VOx thin films as a function of oxygen flux was determined using RBS. The upper and lower stoichiometry limit found are similar to the ones known for bulk material (0.8-1.3). Conductivity measurements have been performed to characterize the electronic structure of our films. Thin VOx films showed mostly a semiconducting behavior. The resistivity was highly temperature and composition dependent and considerably larger than the resistivity of bulk material having the same composition. At low temperatures variable-range hopping conduction was observed, giving evidence for the presence of weak localization in VOx.

AB - High quality VOx thin films on MgO(100) substrates were prepared and studied from the structural and electronic point of view. Epitaxial growth was confirmed by RHEED and XRD techniques. The oxygen content of VOx thin films as a function of oxygen flux was determined using RBS. The upper and lower stoichiometry limit found are similar to the ones known for bulk material (0.8-1.3). Conductivity measurements have been performed to characterize the electronic structure of our films. Thin VOx films showed mostly a semiconducting behavior. The resistivity was highly temperature and composition dependent and considerably larger than the resistivity of bulk material having the same composition. At low temperatures variable-range hopping conduction was observed, giving evidence for the presence of weak localization in VOx.

KW - Epitaxy

KW - Semiconducting films

KW - Vanadium oxide

UR - https://www.scopus.com/pages/publications/0037846329

U2 - 10.1016/S0039-6028(03)00096-7

DO - 10.1016/S0039-6028(03)00096-7

M3 - Conference article

AN - SCOPUS:0037846329

SN - 0039-6028

VL - 532-535

SP - 341

EP - 345

JO - Surface Science

JF - Surface Science

T2 - Proceedings of the 7th International Conference on Nanometer

Y2 - 29 August 2002 through 31 August 2002

ER -

Electrical properties of epitaxially grown VO_x thin films

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Keywords

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