Electrical property of coincidence site lattice grain boundary in location-controlled Si island by excimer-laser crystallization

R Ishihara; M He; V Rana; Y Hiroshima; S Inoue; T Shimoda; JW Metselaar; CIM Beenakker

doi:doi:10.1016/j.tsf.2005.01.044

Electrical property of coincidence site lattice grain boundary in location-controlled Si island by excimer-laser crystallization

R Ishihara, M He, V Rana, Y Hiroshima, S Inoue, T Shimoda, JW Metselaar, CIM Beenakker

Electronic Components, Technology and Materials

Research output: Contribution to journal › Article › Scientific › peer-review

Original language	Undefined/Unknown
Pages (from-to)	97-101
Number of pages	5
Journal	Thin Solid Films
Volume	487
Issue number	1-2
DOIs	https://doi.org/doi:10.1016/j.tsf.2005.01.044
Publication status	Published - 2005

Keywords

academic journal papers
ZX CWTS 1.00 <= JFIS < 3.00

Access to Document

doi:10.1016/j.tsf.2005.01.044

Cite this

@article{30754a0fe8f147e4a765c239b3c01e66,

title = "Electrical property of coincidence site lattice grain boundary in location-controlled Si island by excimer-laser crystallization",

keywords = "academic journal papers, ZX CWTS 1.00 <= JFIS < 3.00",

author = "R Ishihara and M He and V Rana and Y Hiroshima and S Inoue and T Shimoda and JW Metselaar and CIM Beenakker",

year = "2005",

doi = "doi:10.1016/j.tsf.2005.01.044",

language = "Undefined/Unknown",

volume = "487",

pages = "97--101",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

number = "1-2",

}

TY - JOUR

T1 - Electrical property of coincidence site lattice grain boundary in location-controlled Si island by excimer-laser crystallization

AU - Ishihara, R

AU - He, M

AU - Rana, V

AU - Hiroshima, Y

AU - Inoue, S

AU - Shimoda, T

AU - Metselaar, JW

AU - Beenakker, CIM

PY - 2005

Y1 - 2005

KW - academic journal papers

KW - ZX CWTS 1.00 <= JFIS < 3.00

U2 - doi:10.1016/j.tsf.2005.01.044

DO - doi:10.1016/j.tsf.2005.01.044

M3 - Article

SN - 0040-6090

VL - 487

SP - 97

EP - 101

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

ER -