Electrical TCAD Study of the Low-Voltage Avalanche-Mode Superjunction LED

R. J.E. Hueting*, H. De Vries, S. Dutta, A. J. Annema

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

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Abstract

The CMOS silicon avalanche-mode light-emitting diode (AMLED) has emerged as a potential light source for monolithic optical interconnects. Earlier we presented a superjunction light-emitting diode (SJLED) that offers a higher electroluminescent intensity compared to a conventional AMLED because of its more uniform field distribution. However, for reducing power consumption low-voltage ( \leq 15\text{V} ) SJLEDs are desired, not explored before. In this work we present a TCAD simulation feasibility study of the low-voltage SJLED for various doping concentrations and device dimensions. The results show that for obtaining a constant field, approximately a tenfold more aggressive charge balance condition in the SJLED is estimated than traditionally reported. This is important for establishing a guideline to realize optimized RESURF and SJLEDs in the ever-shrinking advanced CMOS nodes.

Original languageEnglish
Pages (from-to)1188-1191
JournalIEEE Electron Device Letters
Volume42
Issue number8
DOIs
Publication statusPublished - 2021

Bibliographical note

Accepted Author Manuscript

Keywords

  • Avalanche breakdown
  • diode
  • light-emitting diode (LED)
  • power
  • silicon

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