Electrical transport mechanisms in amorphous/crystalline silicon heterojunction: Impact of passivation layer thickness

M Mikolá¿ek; M Nemec; M Vojs; V Jakabovi¿; V ¿ehá¿ek; D Zhang; M Zeman; L Harmatha

doi:10.1016/j.tsf.2014.02.068

Electrical transport mechanisms in amorphous/crystalline silicon heterojunction: Impact of passivation layer thickness

M Mikolá¿ek, M Nemec, M Vojs, V Jakabovi¿, V ¿ehá¿ek, D Zhang, M Zeman, L Harmatha

Research output: Contribution to journal › Article › Scientific › peer-review

Original language	English
Pages (from-to)	315-319
Number of pages	5
Journal	Thin Solid Films
Volume	558
Issue number	May
DOIs	https://doi.org/10.1016/j.tsf.2014.02.068
Publication status	Published - 2014

Bibliographical note

Harvest
Available online 26-2-2014

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This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1016/j.tsf.2014.02.068

Cite this

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title = "Electrical transport mechanisms in amorphous/crystalline silicon heterojunction: Impact of passivation layer thickness",

author = "M Mikol{\'a}¿ek and M Nemec and M Vojs and V Jakabovi¿ and V ¿eh{\'a}¿ek and D Zhang and M Zeman and L Harmatha",

note = "Harvest Available online 26-2-2014",

year = "2014",

doi = "10.1016/j.tsf.2014.02.068",

language = "English",

volume = "558",

pages = "315--319",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

number = "May",

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TY - JOUR

T1 - Electrical transport mechanisms in amorphous/crystalline silicon heterojunction: Impact of passivation layer thickness

AU - Mikolá¿ek, M

AU - Nemec, M

AU - Vojs, M

AU - Jakabovi¿, V

AU - ¿ehá¿ek, V

AU - Zhang, D

AU - Zeman, M

AU - Harmatha, L

N1 - Harvest Available online 26-2-2014

PY - 2014

Y1 - 2014

U2 - 10.1016/j.tsf.2014.02.068

DO - 10.1016/j.tsf.2014.02.068

M3 - Article

SN - 0040-6090

VL - 558

SP - 315

EP - 319

JO - Thin Solid Films

JF - Thin Solid Films

IS - May

ER -