INIS
gallium arsenides
100%
quantum dots
100%
electrodes
100%
devices
85%
variations
57%
design
28%
residual stresses
28%
semiconductor materials
28%
control
14%
increasing
14%
host
14%
energy
14%
distance
14%
nanostructures
14%
quantum electronics
14%
voltage
14%
bragg diffraction
14%
fabrication
14%
processing
14%
x radiation
14%
metals
14%
scaling
14%
degrees of freedom
14%
synchrotrons
14%
pressure range mega pa
14%
crystals
14%
investigations
14%
quantum bits
14%
potential energy
14%
quantum computing
14%
size
14%
length
14%
Engineering
Lattice Distortion
100%
Quantum Dot
100%
Gallium Arsenide
100%
Semiconductor
40%
Aluminium Gallium Arsenide
20%
Degree of Freedom
20%
Design Stress
20%
Compressive Residual Stress
20%
Electronics
20%
Residual Stress
20%
Processing Condition
20%
Scaling
20%
Elastic Stress
20%
Heterojunctions
20%
Fabrication
20%
Development
20%
Heterostructures
20%
Bragg Cell
20%
Design
20%
Charging Energy
20%
Nanoscale
20%
Spatial Variation
20%
Computing Device
20%
Applied Voltage
20%
Potential Energy
20%
Physics
Arrays
100%
Electrode
100%
Quantum Dot
100%
Variation
57%
Magnitude
42%
Residual Stress
28%
Semiconductors
28%
Synchrotron
14%
Potential Energy
14%
Degree of Freedom
14%
Diffraction
14%
Electric Potential
14%
Metal
14%
X Ray
14%
Nanoscale
14%
Quantum Electronics
14%
Heterojunctions
14%
Distance
14%
Fabrication
14%
Quantum Computing
14%
Crystals
14%
Difference
14%
Increasing
14%
Material Science
Electrode
100%
Gallium Arsenide
100%
Quantum Dot
100%
Devices
71%
Semiconductor Material
28%
Residual Stress
28%
Heterojunction
28%
Materials Design
14%
Device Fabrication
14%
Aluminium Gallium Arsenide
14%
Metal
14%
Crystals
14%
Electronic Property
14%
Nanoelectrode
14%
Keyphrases
Structural Distortion
25%
X-ray Nanobeams
25%
Design Stress
25%
Bragg Diffraction
25%
Compressive Residual Stress
25%