INIS
design
100%
power
100%
devices
100%
gallium nitrides
100%
operation
60%
semiconductor materials
60%
applications
30%
voltage
30%
transistors
20%
potentials
20%
performance
20%
packaging
20%
dies
20%
semiconductor devices
10%
power density
10%
exploration
10%
efficiency
10%
high temperature
10%
junctions
10%
fabrication
10%
losses
10%
thermal conductivity
10%
topology
10%
breakdown
10%
modeling
10%
Engineering
Nitride
100%
Design
100%
Boost Converter
100%
Semiconductor
100%
Frequency Operation
66%
Power Converter
33%
Stages
33%
Si Device
16%
Basic Material
16%
Breakdown Field
16%
Models
16%
Junction Temperature
16%
Main Driving Force
16%
Innovation
16%
Optimal Topology
16%
Fabrication Approach
16%
Development
16%
Operation Mode
16%
Power Density
16%
Material Science
Semiconductor Material
100%
Gallium Nitride
100%
Devices
100%
Temperature
33%
Transistor
33%
Power Electronics
16%
Materials Property
16%
Thermal Conductivity
16%
Density
16%
Die Design
16%
Semiconductor Device
16%
Chemical Engineering
Temperature
100%
Thermal Conductivity
50%