Electron beam induced deposition of silacyclohexane and dichlorosilacyclohexane: The role of dissociative ionization and dissociative electron attachment in the deposition process

T. P. Ragesh Kumar, Sangeetha Hari, Krishna K. Damodaran, Oddur Ingólfsson, Cornelis W. Hagen

Research output: Contribution to journalArticleScientificpeer-review

2 Citations (Scopus)
29 Downloads (Pure)

Abstract

We present first experiments on electron beam induced deposition of silacyclohexane (SCH) and dichlorosilacyclohexane (DCSCH) under a focused high-energy electron beam (FEBID). We compare the deposition dynamics observed when growing pillars of high aspect ratio from these compounds and we compare the proximity effect observed for these compounds. The two precursors show similar behaviour with regards to fragmentation through dissociative ionization in the gas phase under single-collision conditions. However, while DCSCH shows appreciable cross sections with regards to dissociative electron attachment, SCH is inert with respect to this process. We discuss our deposition experiments in context of the efficiency of these different electron-induced fragmentation processes. With regards to the deposition dynamics, we observe a substantially faster growth from DCSCH and a higher saturation diameter when growing pillars with high aspect ratio. However, both compounds show similar behaviour with regards to the proximity effect. With regards to the composition of the deposits, we observe that the C/Si ratio is similar for both compounds and in both cases close to the initial molecular stoichiometry. The oxygen content in the DCSCH deposits is about double that of the SCH deposits. Only marginal chlorine is observed in the deposits of from DCSCH. We discuss these observations in context of potential approaches for Si deposition.

Original languageEnglish
Pages (from-to)2376-2388
Number of pages13
JournalBeilstein Journal of Nanotechnology (online)
Volume8
Issue number1
DOIs
Publication statusPublished - 2017

Keywords

  • Dichlorosilacyclohexane
  • Dissociative electron attachment
  • Dissociative ionization
  • Electron beam induced deposition
  • Low-energy electrons
  • Silacyclohexane

Fingerprint

Dive into the research topics of 'Electron beam induced deposition of silacyclohexane and dichlorosilacyclohexane: The role of dissociative ionization and dissociative electron attachment in the deposition process'. Together they form a unique fingerprint.

Cite this