TY - JOUR
T1 - Electron beam lithography on curved or tilted surfaces
T2 - Simulations and experiments
AU - Arat, Kerim T.
AU - Zonnevylle, Aernout C.
AU - Ketelaars, Wilhelmus S.M.M.
AU - Belic, Nikola
AU - Hofmann, Ulrich
AU - Hagen, Cornelis W.
N1 - Green Open Access added to TU Delft Institutional Repository ‘You share, we take care!’ – Taverne project https://www.openaccess.nl/en/you-share-we-take-care Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.
PY - 2019
Y1 - 2019
N2 - There is a growing interest for patterning on curved or tilted surfaces using electron beam lithography. Computational proximity correction techniques are well established for flat surfaces and perpendicular exposure, but for curved and tilted surfaces adjustments are needed as the dose distribution is no longer cylindrically symmetric with respect to the surface normal. A graphical processing unit -accelerated 3D Monte Carlo simulation, based on first-principle scattering models, is used to simulate the asymmetric dose distribution. Based on that, an approximate adjustment is made to an existing high-performance proximity effect correction (PEC) algorithm aimed at the correct exposure of a pattern of nanowires on a 17° tilted surface. It was experimentally verified that using the adjusted PEC indeed leads to a more uniform exposure on tilted surfaces.
AB - There is a growing interest for patterning on curved or tilted surfaces using electron beam lithography. Computational proximity correction techniques are well established for flat surfaces and perpendicular exposure, but for curved and tilted surfaces adjustments are needed as the dose distribution is no longer cylindrically symmetric with respect to the surface normal. A graphical processing unit -accelerated 3D Monte Carlo simulation, based on first-principle scattering models, is used to simulate the asymmetric dose distribution. Based on that, an approximate adjustment is made to an existing high-performance proximity effect correction (PEC) algorithm aimed at the correct exposure of a pattern of nanowires on a 17° tilted surface. It was experimentally verified that using the adjusted PEC indeed leads to a more uniform exposure on tilted surfaces.
UR - http://www.scopus.com/inward/record.url?scp=85072780626&partnerID=8YFLogxK
U2 - 10.1116/1.5120632
DO - 10.1116/1.5120632
M3 - Article
SN - 2166-2746
VL - 37
JO - Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics
JF - Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics
IS - 5
M1 - 051604
ER -