Electron transport and room temperature single-electron charging in 10 nm scale PtC nanostructures formed by electron beam induced deposition

Z. A.K. Durrani, M. E. Jones, C. Wang, M. Scotuzzi, C. W. Hagen

    Research output: Contribution to journalArticleScientificpeer-review

    5 Citations (Scopus)
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    Abstract

    Nanostructures of platinum-carbon nanocomposite material have been formed by electron-beam induced deposition. These consist of nanodots and nanowires with a minimum size ∼20 nm, integrated within ∼100 nm nanogap n-type silicon-on-insulator transistor structures. The nanodot transistors use ∼20 nm Pt/C nanodots, tunnel-coupled to Pt/C nanowire electrodes, bridging the Si nanogaps. Roomerature single-electron transistor operation has been measured, and single-electron current oscillations and 'Coulomb diamonds' observed. In nanowire transistors, the temperature dependence from 290 to 8 K suggests that the current is a combination of thermally activated and tunnelling transport of carriers across potential barriers along the current path, and that the Pt/C is p-type at low temperature.

    Original languageEnglish
    Article number474002
    JournalNanotechnology
    Volume28
    Issue number47
    DOIs
    Publication statusPublished - 3 Nov 2017

    Keywords

    • Electron beam induced deposition
    • single electron transistor
    • single electron transport

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