INIS
anions
16%
annealing
33%
annihilation
100%
bleaching
16%
cations
16%
depth
16%
doppler broadening
33%
electronic structure
100%
hydrides
100%
hydrogen
16%
illumination
33%
metals
16%
nanostructures
16%
positron annihilation spectroscopy
16%
positrons
100%
probes
33%
removal
16%
semiconductor materials
16%
thin films
100%
vacancies
100%
yttrium
100%
yttrium oxides
50%
Material Science
Annealing
33%
Electronic Structure
100%
Hydride
100%
Materials
16%
Metal
16%
Photochromics
100%
Positron Annihilation Spectroscopy
16%
Semiconductor Material
16%
Temperature
16%
Thin Films
100%
Yttrium
100%
Keyphrases
Anion Vacancies
16%
Dark Conditions
16%
Monovacancy
16%
Nanostructural Changes
16%
Optical Band Gap
16%
Parameter Depth
16%
Photochromic
100%
Photochromic Effect
33%
Photochromic Mechanism
16%
Systematic Change
16%
Y2O3 Thin Films
16%
Yttrium
100%
Yttrium Oxide
33%