Electronic transport in helium-ion-beam etched encapsulated graphene nanoribbons

Gaurav Nanda, Gregor Hlawacek, Srijit Goswami, Kenji Watanabe, Takashi Taniguchi, Paul F.A. Alkemade*

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

24 Citations (Scopus)
75 Downloads (Pure)


We report the etching of and electronic transport in nanoribbons of graphene sandwiched between atomically flat hexagonal boron nitride (h-BN). The etching of ribbons of varying width was achieved with a focused beam of 30 keV He+ ions. Using in-situ electrical measurements, we established a critical dose of 7000 ions nm−2 for creating a 10 nm wide insulating barrier between a nanoribbon and the rest of the encapsulated graphene. Subsequently, we measured the transport properties of the ion-beam etched graphene nanoribbons. Conductance measurements at 4 K show an energy gap, that increases with decreasing ribbon width. The narrowest ribbons show a weak dependence of the conductance on the Fermi energy. Furthermore, we observed power-law scaling in the measured current-voltage (I-V) curves, indicating that the conductance in the helium-ion-beam etched encapsulated graphene nanoribbons is governed by Coulomb blockade.

Original languageEnglish
Pages (from-to)419-425
Number of pages7
Publication statusPublished - 2017


  • Bandgap
  • Electronic transport
  • Graphene
  • Graphene nanoribbons
  • h-BN
  • Helium ion microsope


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