Electrothermal characterization of silicon-on-glass VDMOSFETs

N Nenadovic; H Schellevis; V Cuoco; A Griffo; SJCh Theeuwen; LK Nanver; HFF Jos; JW Slotboom

doi:doi:10.1016/j.microrel.2004.08.015

Electrothermal characterization of silicon-on-glass VDMOSFETs

N Nenadovic, H Schellevis, V Cuoco, A Griffo, SJCh Theeuwen, LK Nanver, HFF Jos, JW Slotboom

Electronic Components, Technology and Materials

Research output: Contribution to journal › Article › Scientific › peer-review

4 Citations (Scopus)

Abstract

Electrothermal consequences of implementing bulk-silicon RF power MOS processes in the silicon-on-glass substrate transfer technology are investigated in this paper. Fabricated silicon-on-glass vertical double-diffused MOSFETs are measured on-wafer and very large thermal resistance values are extracted for each design. The influence of the thermal resistance on RF performance is analyzed, and it is shown that strong electrothermal feedback severely lowers the power capability and strongly increases the operating temperature. A combination of low-thermal contacting and surface mounting to thermally conducting printed circuit board is shown to be very efficient in reducing the large thermal resistance. Numerical thermal simulations demonstrate that surface-mounted silicon-on-glass transistors can have lower thermal resistance than the bulk-silicon device with a wafer thickness reduced down to 100 ¿m.

Original language	Undefined/Unknown
Pages (from-to)	541-550
Number of pages	10
Journal	Microelectronics Reliability
Volume	45
Issue number	3-4
DOIs	https://doi.org/doi:10.1016/j.microrel.2004.08.015
Publication status	Published - 2005

Bibliographical note

punten naar ECTM/ ed. is niet bekend

Keywords

academic journal papers
ZX CWTS JFIS < 1.00

Access to Document

doi:10.1016/j.microrel.2004.08.015

Cite this

@article{f690b014f29c48079362a7a5a6594420,

title = "Electrothermal characterization of silicon-on-glass VDMOSFETs",

abstract = "Electrothermal consequences of implementing bulk-silicon RF power MOS processes in the silicon-on-glass substrate transfer technology are investigated in this paper. Fabricated silicon-on-glass vertical double-diffused MOSFETs are measured on-wafer and very large thermal resistance values are extracted for each design. The influence of the thermal resistance on RF performance is analyzed, and it is shown that strong electrothermal feedback severely lowers the power capability and strongly increases the operating temperature. A combination of low-thermal contacting and surface mounting to thermally conducting printed circuit board is shown to be very efficient in reducing the large thermal resistance. Numerical thermal simulations demonstrate that surface-mounted silicon-on-glass transistors can have lower thermal resistance than the bulk-silicon device with a wafer thickness reduced down to 100 ¿m.",

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author = "N Nenadovic and H Schellevis and V Cuoco and A Griffo and SJCh Theeuwen and LK Nanver and HFF Jos and JW Slotboom",

note = "punten naar ECTM/ ed. is niet bekend",

year = "2005",

doi = "doi:10.1016/j.microrel.2004.08.015",

language = "Undefined/Unknown",

volume = "45",

pages = "541--550",

journal = "Microelectronics Reliability",

issn = "0026-2714",

publisher = "Elsevier",

number = "3-4",

}

TY - JOUR

T1 - Electrothermal characterization of silicon-on-glass VDMOSFETs

AU - Nenadovic, N

AU - Schellevis, H

AU - Cuoco, V

AU - Griffo, A

AU - Theeuwen, SJCh

AU - Nanver, LK

AU - Jos, HFF

AU - Slotboom, JW

N1 - punten naar ECTM/ ed. is niet bekend

PY - 2005

Y1 - 2005

N2 - Electrothermal consequences of implementing bulk-silicon RF power MOS processes in the silicon-on-glass substrate transfer technology are investigated in this paper. Fabricated silicon-on-glass vertical double-diffused MOSFETs are measured on-wafer and very large thermal resistance values are extracted for each design. The influence of the thermal resistance on RF performance is analyzed, and it is shown that strong electrothermal feedback severely lowers the power capability and strongly increases the operating temperature. A combination of low-thermal contacting and surface mounting to thermally conducting printed circuit board is shown to be very efficient in reducing the large thermal resistance. Numerical thermal simulations demonstrate that surface-mounted silicon-on-glass transistors can have lower thermal resistance than the bulk-silicon device with a wafer thickness reduced down to 100 ¿m.

AB - Electrothermal consequences of implementing bulk-silicon RF power MOS processes in the silicon-on-glass substrate transfer technology are investigated in this paper. Fabricated silicon-on-glass vertical double-diffused MOSFETs are measured on-wafer and very large thermal resistance values are extracted for each design. The influence of the thermal resistance on RF performance is analyzed, and it is shown that strong electrothermal feedback severely lowers the power capability and strongly increases the operating temperature. A combination of low-thermal contacting and surface mounting to thermally conducting printed circuit board is shown to be very efficient in reducing the large thermal resistance. Numerical thermal simulations demonstrate that surface-mounted silicon-on-glass transistors can have lower thermal resistance than the bulk-silicon device with a wafer thickness reduced down to 100 ¿m.

KW - academic journal papers

KW - ZX CWTS JFIS < 1.00

U2 - doi:10.1016/j.microrel.2004.08.015

DO - doi:10.1016/j.microrel.2004.08.015

M3 - Article

SN - 0026-2714

VL - 45

SP - 541

EP - 550

JO - Microelectronics Reliability

JF - Microelectronics Reliability

IS - 3-4

ER -