Abstract
This article discusses the various ways in which the stresses experienced by the IGBTs and diodes in a Dual Active Bridge (DAB) are asymmetric. This asymmetry can be between the two bridges or between IGBTs and diodes on both bridges. The terminal voltage, transformer ratio and the power through the DAB are varied to discuss the stresses. These asymmetrical stresses lead to devices' distinct temperatures. This unevenness of stresses can affect the lifetime of the devices employed. An analytical model of the DAB is used to analyse the currents and power losses in various devices. Some preliminary results of power losses in the devices are presented.
Original language | English |
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Title of host publication | 2024 IEEE 21st International Power Electronics and Motion Control Conference, PEMC 2024 |
Publisher | IEEE |
ISBN (Electronic) | 9798350385236 |
DOIs | |
Publication status | Published - 2024 |
Event | 21st IEEE International Power Electronics and Motion Control Conference, PEMC 2024 - Pilsen, Czech Republic Duration: 30 Sept 2024 → 3 Oct 2024 |
Publication series
Name | 2024 IEEE 21st International Power Electronics and Motion Control Conference, PEMC 2024 |
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Conference
Conference | 21st IEEE International Power Electronics and Motion Control Conference, PEMC 2024 |
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Country/Territory | Czech Republic |
City | Pilsen |
Period | 30/09/24 → 3/10/24 |
Bibliographical note
Green Open Access added to TU Delft Institutional Repository ‘You share, we take care!’ – Taverne project https://www.openaccess.nl/en/you-share-we-take-careOtherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.
Keywords
- Dual Active Bridge
- Lifetime
- Reliability
- Thermal cycling