TY - GEN
T1 - Energy-efficient SNN Architecture using 3nm FinFET Multiport SRAM-based CIM with Online Learning
AU - Huijbregts, Lucas
AU - Liu, Hsiao Hsuan
AU - Detterer, Paul
AU - Hamdioui, Said
AU - Yousefzadeh, Amirreza
AU - Bishnoi, Rajendra
PY - 2024
Y1 - 2024
N2 - Current Artificial Intelligence (AI) computation systems face challenges, primarily from the memory-wall issue, limiting overall system-level performance, especially for Edge devices with constrained battery budgets, such as smartphones, wearables, and Internet-of-Things sensor systems. In this paper, we propose a new SRAM-based Compute-In-Memory (CIM) accelerator optimized for Spiking Neural Networks (SNNs) Inference. Our proposed architecture employs a multiport SRAM design with multiple decoupled Read ports to enhance the throughput and Transposable Read-Write ports to facilitate online learning. Furthermore, we develop an Arbiter circuit for efficient data-processing and port allocations during the computation. Results for a 128×128 array in 3nm FinFET technology demonstrate a 3.1× improvement in speed and a 2.2× enhancement in energy efficiency with our proposed multiport SRAM design compared to the traditional single-port design. At system-level, a throughput of 44 MInf/s at 607 pJ/Inf and 29mW is achieved.
AB - Current Artificial Intelligence (AI) computation systems face challenges, primarily from the memory-wall issue, limiting overall system-level performance, especially for Edge devices with constrained battery budgets, such as smartphones, wearables, and Internet-of-Things sensor systems. In this paper, we propose a new SRAM-based Compute-In-Memory (CIM) accelerator optimized for Spiking Neural Networks (SNNs) Inference. Our proposed architecture employs a multiport SRAM design with multiple decoupled Read ports to enhance the throughput and Transposable Read-Write ports to facilitate online learning. Furthermore, we develop an Arbiter circuit for efficient data-processing and port allocations during the computation. Results for a 128×128 array in 3nm FinFET technology demonstrate a 3.1× improvement in speed and a 2.2× enhancement in energy efficiency with our proposed multiport SRAM design compared to the traditional single-port design. At system-level, a throughput of 44 MInf/s at 607 pJ/Inf and 29mW is achieved.
UR - http://www.scopus.com/inward/record.url?scp=85211102658&partnerID=8YFLogxK
U2 - 10.1145/3649329.3656514
DO - 10.1145/3649329.3656514
M3 - Conference contribution
AN - SCOPUS:85211102658
T3 - Proceedings - Design Automation Conference
BT - Proceedings of the 61st ACM/IEEE Design Automation Conference, DAC 2024
PB - IEEE
T2 - 61st ACM/IEEE Design Automation Conference, DAC 2024
Y2 - 23 June 2024 through 27 June 2024
ER -