Enhancing performance of polar InGaN-based thin film solar cells through intrinsic layer impact optimization: Numerical modeling

Haddou El Ghazi*, Yasin Ramazan Eker, Redouane En-nadir, Shrouk E. Zaki, Mohamed A. Basyooni*

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

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Abstract

The paper deals with the conception and feasibility of the device structure based on the optimized PIN-(In, Ga)N homojunction solar cells. A new and efficient model combining the most realistic ones considering the impacts of band gap narrowing, collection efficiency, Shockley-Read-Hall recombination, and interface polarization is proposed to examine the solar cells' performance numerically. The functioning processes of n-In0.42Ga0.58N/i-(In, Ga)N/p-In0.42Ga0.58N solar cells at room temperature were investigated by calculating their characteristics for the AM1.5D, AM1.5G, and AM0 American Society for Testing and Materials experimental data. Our results show that the indium content, thickness, and defect density of the intrinsic layer strongly influence the characteristics of the InGaN solar cells. As the In-mole fraction increases, Voc, FF and efficiency diminish to reach an independent regime for high In-content. A higher-quality 2μm−In0.43Ga0.57N for 1014cm−3 defect concentration can exhibit as high an efficiency as ≅11.3%, dropping to ≅4.12% for 1016cm−3 one.

Original languageEnglish
Article number101909
Number of pages10
JournalResults in Engineering
Volume21
DOIs
Publication statusPublished - 2024

Funding

We gratefully acknowledge the support from the National Center for Scientific and Technical Research (CNRST: Morocco) and the Scientific and Technological Research Institution (TÜBİTAK: Turkey) within the joint research project 2543-No: 122N382.

Keywords

  • (In, Ga)N
  • Intrinsic layer
  • Performance
  • Photovoltaic
  • PIN
  • Solar cell

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