Enhancing the Stability of the Electron Density in Electrochemically Doped ZnO Quantum Dots

Sólrún Gudjónsdóttir, Arjan Houtepen, Christel Koopman

Research output: Contribution to journalArticleScientificpeer-review

12 Downloads (Pure)

Abstract

Electronic doping of semiconductor nanomaterials can be efficiently achieved using electrochemistry. However, the injected charge carriers are usually not very stable. After disconnecting the cell that is used for electrochemical doping the carrier density drops, typically in several minutes. While there are multiple possible causes for this, we demonstrate here, using n-doped ZnO quantum-dot films of variable thickness that the dominant mechanism is reduction of solvent impurities by the injected electrons. We subsequently investigate two different ways to enhance the doping stability of ZnO QD films. The first method uses preemptive reduction of the solvent impurities; the second method involves a solid covering the QD film, which hinders impurity diffusion to the film. Both methods enhance the doping stability of the QD films greatly
Original languageEnglish
Article number144708
Number of pages6
JournalJournal of Chemical Physics
Volume151
Issue number14
DOIs
Publication statusPublished - 2019

Fingerprint Dive into the research topics of 'Enhancing the Stability of the Electron Density in Electrochemically Doped ZnO Quantum Dots'. Together they form a unique fingerprint.

Cite this