@inproceedings{cb4f84901fd74077bea0d1a53040b8f5,
title = "Epitaxial growth of large-area p+n diodes at 400 ºC by aluminum-induced crystallization",
keywords = "Conf.proc. > 3 pag",
author = "A Sakic and L Qi and TLM Scholtes and {van der Cingel}, J and LK Nanver",
year = "2012",
doi = "10.1109/ESSDERC.2012.6343354",
language = "English",
isbn = "978-1-4673-1707-8",
publisher = "IEEE Society",
pages = "145--148",
booktitle = "Proc. of the 42th European Solid-State Device Research Conference (ESSDERC 2012)",
note = "42th European Solid-State Device Research Conference (ESSDERC 2012), Bordeaux, France ; Conference date: 17-09-2012 Through 21-09-2012",
}