Erratum: Electrical characteristics and photodetection mechanism of TiO2/AlGaN/GaN heterostructure-based ultraviolet detectors with a Schottky junction (J. Mater. Chem. C (2023) 11 (1704–1713) DOI: 10.1039/D2TC04491A)

Teng Zhan, Jianwen Sun, Tao Feng, Yulong Zhang, Binru Zhou, Banghong Zhang, Junxi Wang, Pasqualina M. Sarro, Guoqi Zhang, More Authors

Research output: Contribution to journalComment/Letter to the editorScientificpeer-review

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Abstract

The authors regret an error in the abstract of the published article: the text ‘‘(i) the Schottky emission mechanism at a low reverse voltage (0–1 V) before the current is fully turned on.’’ should be changed to ‘‘(i) the Schottky emission mechanism at a low reverse voltage (0 to 1 V) before the current is fully turned on.’’ This change does not affect the main conclusions of the manuscript. The authors would like to apologize for any inconvenience caused. The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers.

Original languageEnglish
Pages (from-to)3661
Number of pages1
JournalJournal of Materials Chemistry C
Volume11
Issue number10
DOIs
Publication statusPublished - 2023

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