Erratum: Realizing the potential of RF-sputtered hydrogenated fluorine-doped indium oxide as an electrode material for ultrathin SiOx/poly-si passivating contacts (ACS Applied Energy Materials (2020) 3:9 (8606-8618) DOI: 10.1021/acsaem.0c01206)

Can Han; Guangtao Yang; Paul Procel; Luana Mazzarella; Yifeng Zhao; Stephan Eijt; Henk Schut; Miro Zeman; Olindo Isabella; null More Authors

doi:10.1021/acsaem.1c00519

Erratum: Realizing the potential of RF-sputtered hydrogenated fluorine-doped indium oxide as an electrode material for ultrathin SiO_x/poly-si passivating contacts (ACS Applied Energy Materials (2020) 3:9 (8606-8618) DOI: 10.1021/acsaem.0c01206)

Can Han, Guangtao Yang, Paul Procel, Luana Mazzarella, Yifeng Zhao, Stephan Eijt, Henk Schut, Miro Zeman, Olindo Isabella, More Authors

Research output: Contribution to journal › Comment/Letter to the editor › Scientific › peer-review

Abstract

The authors inadvertently misreported the order of magnitude of the TCO deposition pressure, for which all “10-3 Pa” should be intended as “Pa”. The following errors appear in the article. P8607. EXPERIMENTAL SECTION, 2.1. “2.50 × 10-3 Pa”, “1.6 × 10-5 Pa”, and “2.20 × 10-3 Pa” should be read as “2.50 Pa”, “1.6 × 10-2 Pa”, and “2.20 Pa”, respectively. These errors do not affect the “RESULTS AND DISCUSSION” or “CONCLUSIONS” of this article.

Original language	English
Pages (from-to)	2961
Number of pages	1
Journal	ACS Applied Energy Materials
Volume	4
Issue number	3
DOIs	https://doi.org/10.1021/acsaem.1c00519
Publication status	Published - 2021

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Realizing the Potential of RF-Sputtered Hydrogenated Fluorine-Doped Indium Oxide as an Electrode Material for Ultrathin SiO _x/Poly-Si Passivating Contacts
Han, C., Yang, G., Montes, A., Procel, P., Mazzarella, L., Zhao, Y., Eijt, S., Schut, H., Zhang, X., Zeman, M. & Isabella, O., 2020, In: ACS Applied Energy Materials. 3, 9, p. 8606-8618 13 p.
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Han, C., Yang, G., Procel, P., Mazzarella, L., Zhao, Y., Eijt, S., Schut, H., Zeman, M., Isabella, O., & More Authors (2021). Erratum: Realizing the potential of RF-sputtered hydrogenated fluorine-doped indium oxide as an electrode material for ultrathin SiO_x/poly-si passivating contacts (ACS Applied Energy Materials (2020) 3:9 (8606-8618) DOI: 10.1021/acsaem.0c01206). ACS Applied Energy Materials, 4(3), 2961. https://doi.org/10.1021/acsaem.1c00519

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title = "Erratum: Realizing the potential of RF-sputtered hydrogenated fluorine-doped indium oxide as an electrode material for ultrathin SiOx/poly-si passivating contacts (ACS Applied Energy Materials (2020) 3:9 (8606-8618) DOI: 10.1021/acsaem.0c01206)",

abstract = "The authors inadvertently misreported the order of magnitude of the TCO deposition pressure, for which all “10-3 Pa” should be intended as “Pa”. The following errors appear in the article. P8607. EXPERIMENTAL SECTION, 2.1. “2.50 × 10-3 Pa”, “1.6 × 10-5 Pa”, and “2.20 × 10-3 Pa” should be read as “2.50 Pa”, “1.6 × 10-2 Pa”, and “2.20 Pa”, respectively. These errors do not affect the “RESULTS AND DISCUSSION” or “CONCLUSIONS” of this article.",

author = "Can Han and Guangtao Yang and Paul Procel and Luana Mazzarella and Yifeng Zhao and Stephan Eijt and Henk Schut and Miro Zeman and Olindo Isabella and {More Authors}",

year = "2021",

doi = "10.1021/acsaem.1c00519",

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pages = "2961",

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Han, C, Yang, G, Procel, P , Mazzarella, L, Zhao, Y, Eijt, S , Schut, H , Zeman, M , Isabella, O & More Authors 2021, 'Erratum: Realizing the potential of RF-sputtered hydrogenated fluorine-doped indium oxide as an electrode material for ultrathin SiO_x/poly-si passivating contacts (ACS Applied Energy Materials (2020) 3:9 (8606-8618) DOI: 10.1021/acsaem.0c01206)', ACS Applied Energy Materials, vol. 4, no. 3, pp. 2961. https://doi.org/10.1021/acsaem.1c00519

Erratum: Realizing the potential of RF-sputtered hydrogenated fluorine-doped indium oxide as an electrode material for ultrathin SiO_x/poly-si passivating contacts (ACS Applied Energy Materials (2020) 3:9 (8606-8618) DOI: 10.1021/acsaem.0c01206). / Han, Can; Yang, Guangtao; Procel, Paul et al.
In: ACS Applied Energy Materials, Vol. 4, No. 3, 2021, p. 2961.

Research output: Contribution to journal › Comment/Letter to the editor › Scientific › peer-review

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AU - Han, Can

AU - Yang, Guangtao

AU - Procel, Paul

AU - Mazzarella, Luana

AU - Zhao, Yifeng

AU - Eijt, Stephan

AU - Schut, Henk

AU - Zeman, Miro

AU - Isabella, Olindo

AU - More Authors, null

PY - 2021

Y1 - 2021

N2 - The authors inadvertently misreported the order of magnitude of the TCO deposition pressure, for which all “10-3 Pa” should be intended as “Pa”. The following errors appear in the article. P8607. EXPERIMENTAL SECTION, 2.1. “2.50 × 10-3 Pa”, “1.6 × 10-5 Pa”, and “2.20 × 10-3 Pa” should be read as “2.50 Pa”, “1.6 × 10-2 Pa”, and “2.20 Pa”, respectively. These errors do not affect the “RESULTS AND DISCUSSION” or “CONCLUSIONS” of this article.

AB - The authors inadvertently misreported the order of magnitude of the TCO deposition pressure, for which all “10-3 Pa” should be intended as “Pa”. The following errors appear in the article. P8607. EXPERIMENTAL SECTION, 2.1. “2.50 × 10-3 Pa”, “1.6 × 10-5 Pa”, and “2.20 × 10-3 Pa” should be read as “2.50 Pa”, “1.6 × 10-2 Pa”, and “2.20 Pa”, respectively. These errors do not affect the “RESULTS AND DISCUSSION” or “CONCLUSIONS” of this article.

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Han C, Yang G, Procel P , Mazzarella L, Zhao Y, Eijt S et al. Erratum: Realizing the potential of RF-sputtered hydrogenated fluorine-doped indium oxide as an electrode material for ultrathin SiO_x/poly-si passivating contacts (ACS Applied Energy Materials (2020) 3:9 (8606-8618) DOI: 10.1021/acsaem.0c01206). ACS Applied Energy Materials. 2021;4(3):2961. doi: 10.1021/acsaem.1c00519

Erratum: Realizing the potential of RF-sputtered hydrogenated fluorine-doped indium oxide as an electrode material for ultrathin SiOx/poly-si passivating contacts (ACS Applied Energy Materials (2020) 3:9 (8606-8618) DOI: 10.1021/acsaem.0c01206)

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Realizing the Potential of RF-Sputtered Hydrogenated Fluorine-Doped Indium Oxide as an Electrode Material for Ultrathin SiO x/Poly-Si Passivating Contacts

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Erratum: Realizing the potential of RF-sputtered hydrogenated fluorine-doped indium oxide as an electrode material for ultrathin SiO_x/poly-si passivating contacts (ACS Applied Energy Materials (2020) 3:9 (8606-8618) DOI: 10.1021/acsaem.0c01206)

Realizing the Potential of RF-Sputtered Hydrogenated Fluorine-Doped Indium Oxide as an Electrode Material for Ultrathin SiO _x/Poly-Si Passivating Contacts