Etch mechanism and etch-induced effects in the inductively coupled plasma etching of GaN

R Cheung, B Rong, EWJM van der Drift, WG Sloof

Research output: Contribution to journalArticleScientificpeer-review

12 Citations (Scopus)
Original languageUndefined/Unknown
Pages (from-to)1268-1272
Number of pages5
JournalJournal of Vacuum Science and Technology. Part B: Microelectronics and Nanometer Structures
Volume21
Issue number4
Publication statusPublished - 2003

Keywords

  • academic journal papers
  • ZX CWTS 1.00 <= JFIS < 3.00

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