Evaluation of al-doped SPE ultrashallow P+N junctions for use as PNP SiGe HBT emitters

Y Civale; G Lorito; C Xu; LK Nanver; R van der Toorn

Evaluation of al-doped SPE ultrashallow P+N junctions for use as PNP SiGe HBT emitters

Y Civale, G Lorito, C Xu, LK Nanver, R van der Toorn

Electronic Components, Technology and Materials

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

3 Citations (Scopus)

Original language	Undefined/Unknown
Title of host publication	IEEE international workshop on junction technology
Editors	YL Jiang, XP Qu, GP Ru, BZ Li
Place of Publication	s.l.
Publisher	IEEE Society
Pages	97-100
Number of pages	4
ISBN (Print)	978-1-4244-1737-7
Publication status	Published - 2008
Event	IWJT 2008, Shanghai, China - s.l. Duration: 15 May 2008 → 16 May 2008

Publication series

Name
Publisher	IEEE

Conference

Conference	IWJT 2008, Shanghai, China
Period	15/05/08 → 16/05/08

Keywords

conference contrib. refereed
Conf.proc. > 3 pag

Cite this

@inproceedings{74a5c70d89e14974b3917937263bf125,

title = "Evaluation of al-doped SPE ultrashallow P+N junctions for use as PNP SiGe HBT emitters",

keywords = "conference contrib. refereed, Conf.proc. > 3 pag",

author = "Y Civale and G Lorito and C Xu and LK Nanver and {van der Toorn}, R",

year = "2008",

language = "Undefined/Unknown",

isbn = "978-1-4244-1737-7",

publisher = "IEEE Society",

pages = "97--100",

editor = "YL Jiang and XP Qu and GP Ru and BZ Li",

booktitle = "IEEE international workshop on junction technology",

note = "IWJT 2008, Shanghai, China ; Conference date: 15-05-2008 Through 16-05-2008",

}

Evaluation of al-doped SPE ultrashallow P+N junctions for use as PNP SiGe HBT emitters. / Civale, Y; Lorito, G; Xu, C et al.
IEEE international workshop on junction technology. ed. / YL Jiang; XP Qu; GP Ru; BZ Li. s.l.: IEEE Society, 2008. p. 97-100.

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

TY - GEN

T1 - Evaluation of al-doped SPE ultrashallow P+N junctions for use as PNP SiGe HBT emitters

AU - Civale, Y

AU - Lorito, G

AU - Xu, C

AU - Nanver, LK

AU - van der Toorn, R

PY - 2008

Y1 - 2008

KW - conference contrib. refereed

KW - Conf.proc. > 3 pag

M3 - Conference contribution

SN - 978-1-4244-1737-7

SP - 97

EP - 100

BT - IEEE international workshop on junction technology

A2 - Jiang, YL

A2 - Qu, XP

A2 - Ru, GP

A2 - Li, BZ

PB - IEEE Society

CY - s.l.

T2 - IWJT 2008, Shanghai, China

Y2 - 15 May 2008 through 16 May 2008

ER -