INIS
field effect transistors
100%
evaluation
100%
defects
100%
randomness
100%
fins
100%
particles
50%
reliability
50%
oxides
25%
metals
25%
semiconductor materials
25%
dynamics
12%
operation
12%
sensitivity
12%
miniaturization
12%
manufacturing
12%
levels
12%
transistors
12%
simulation
12%
variations
12%
pulses
12%
leakage
12%
spices
12%
density
12%
integrated circuits
12%
size
12%
lifetime
12%
Engineering
Resistive
100%
Defects
100%
Field-Effect Transistor
100%
Ionizing Particle
50%
Complementary Metal-Oxide-Semiconductor
25%
Integrated Circuit
12%
Models
12%
Current Pulse
12%
SPICE
12%
Density
12%
Miniaturization
12%
Feature Size
12%
Manufacturing Process
12%
Material Science
Field Effect Transistor
100%
Particle
66%
Complementary Metal-Oxide-Semiconductor Device
33%
Density
16%
Electronic Circuit
16%
Transistor
16%