Excimer laser annealing of amorphous oxide thin-film transistors passivated with hybrid passivation layer

Juan Paolo Bermundo; Y. Ishikawa; MN Fujii; Michiel Van Der Zwan; T. Nonaka; Ryoichi Ishihara; Y. Uraoka

Excimer laser annealing of amorphous oxide thin-film transistors passivated with hybrid passivation layer

Juan Paolo Bermundo, Y. Ishikawa, MN Fujii, Michiel Van Der Zwan, T. Nonaka, Ryoichi Ishihara, Y. Uraoka

Electronic Components, Technology and Materials

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

Abstract

We performed excimer laser annealing on passivated amorphous oxide semiconductor thin-film transistors such as amorphous InZnO and InGaZnO. These thin-film transistors were passivated by a hybrid passivation known as polysilsesquioxane. We show that excimer laser annealing is a good low temperature annealing method for high performance amorphous oxide thin-film transistors. © 2014 ITE and SID.

Original language	English
Title of host publication	Proceedings The 21st International Display Workshops
Editors	S Komura, A Mikami
Place of Publication	Campbell, CA
Publisher	SID
Pages	245-246
Number of pages	2
Volume	1
ISBN (Print)	978-1-5108-2779-0
Publication status	Published - 2014
Event	IDW 2014: 21st International Display Workshop 2014 - Niigata, Japan Duration: 3 Dec 2014 → 5 Dec 2014 Conference number: 21

Workshop

Workshop	IDW 2014
Abbreviated title	IDW
Country/Territory	Japan
City	Niigata
Period	3/12/14 → 5/12/14

Keywords

Excimer laser annealing
Oxide semiconductors
Passivation
Polysilsesquioxane

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Bermundo, J. P., Ishikawa, Y., Fujii, MN., Van Der Zwan, M., Nonaka, T., Ishihara, R., & Uraoka, Y. (2014). Excimer laser annealing of amorphous oxide thin-film transistors passivated with hybrid passivation layer. In S. Komura, & A. Mikami (Eds.), Proceedings The 21st International Display Workshops (Vol. 1, pp. 245-246). SID. https://www.scopus.com/record/display.uri?eid=2-s2.0-85050559156&origin=resultslist&sort=plf-f&src=s&sid=5aca5b3abbe7134b42b7ee739db1e61e&sot=autdocs&sdt=autdocs&sl=17&s=AU-ID%286506144438%29&relpos=4&citeCnt=0&searchTerm=

@inproceedings{b99abe8ad5bd4afd8a105797ea1a608b,

title = "Excimer laser annealing of amorphous oxide thin-film transistors passivated with hybrid passivation layer",

abstract = "We performed excimer laser annealing on passivated amorphous oxide semiconductor thin-film transistors such as amorphous InZnO and InGaZnO. These thin-film transistors were passivated by a hybrid passivation known as polysilsesquioxane. We show that excimer laser annealing is a good low temperature annealing method for high performance amorphous oxide thin-film transistors. {\textcopyright} 2014 ITE and SID.",

keywords = "Excimer laser annealing, Oxide semiconductors, Passivation, Polysilsesquioxane",

author = "Bermundo, {Juan Paolo} and Y. Ishikawa and MN Fujii and {Van Der Zwan}, Michiel and T. Nonaka and Ryoichi Ishihara and Y. Uraoka",

year = "2014",

language = "English",

isbn = "978-1-5108-2779-0",

volume = "1",

pages = "245--246",

editor = "S Komura and A Mikami",

booktitle = "Proceedings The 21st International Display Workshops",

publisher = "SID",

note = "IDW 2014 : 21st International Display Workshop 2014, IDW ; Conference date: 03-12-2014 Through 05-12-2014",

}

Bermundo, JP, Ishikawa, Y, Fujii, MN, Van Der Zwan, M, Nonaka, T, Ishihara, R & Uraoka, Y 2014, Excimer laser annealing of amorphous oxide thin-film transistors passivated with hybrid passivation layer. in S Komura & A Mikami (eds), Proceedings The 21st International Display Workshops. vol. 1, SID, Campbell, CA, pp. 245-246, IDW 2014, Niigata, Japan, 3/12/14. <https://www.scopus.com/record/display.uri?eid=2-s2.0-85050559156&origin=resultslist&sort=plf-f&src=s&sid=5aca5b3abbe7134b42b7ee739db1e61e&sot=autdocs&sdt=autdocs&sl=17&s=AU-ID%286506144438%29&relpos=4&citeCnt=0&searchTerm=>

Excimer laser annealing of amorphous oxide thin-film transistors passivated with hybrid passivation layer. / Bermundo, Juan Paolo; Ishikawa, Y.; Fujii, MN et al.
Proceedings The 21st International Display Workshops. ed. / S Komura; A Mikami. Vol. 1 Campbell, CA: SID, 2014. p. 245-246.

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

TY - GEN

T1 - Excimer laser annealing of amorphous oxide thin-film transistors passivated with hybrid passivation layer

AU - Bermundo, Juan Paolo

AU - Ishikawa, Y.

AU - Fujii, MN

AU - Van Der Zwan, Michiel

AU - Nonaka, T.

AU - Ishihara, Ryoichi

AU - Uraoka, Y.

N1 - Conference code: 21

PY - 2014

Y1 - 2014

N2 - We performed excimer laser annealing on passivated amorphous oxide semiconductor thin-film transistors such as amorphous InZnO and InGaZnO. These thin-film transistors were passivated by a hybrid passivation known as polysilsesquioxane. We show that excimer laser annealing is a good low temperature annealing method for high performance amorphous oxide thin-film transistors. © 2014 ITE and SID.

AB - We performed excimer laser annealing on passivated amorphous oxide semiconductor thin-film transistors such as amorphous InZnO and InGaZnO. These thin-film transistors were passivated by a hybrid passivation known as polysilsesquioxane. We show that excimer laser annealing is a good low temperature annealing method for high performance amorphous oxide thin-film transistors. © 2014 ITE and SID.

KW - Excimer laser annealing

KW - Oxide semiconductors

KW - Passivation

KW - Polysilsesquioxane

M3 - Conference contribution

SN - 978-1-5108-2779-0

VL - 1

SP - 245

EP - 246

BT - Proceedings The 21st International Display Workshops

A2 - Komura, S

A2 - Mikami, A

PB - SID

CY - Campbell, CA

T2 - IDW 2014

Y2 - 3 December 2014 through 5 December 2014

ER -

Excimer laser annealing of amorphous oxide thin-film transistors passivated with hybrid passivation layer

Abstract

Workshop

Keywords

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