Excimer laser annealing of amorphous oxide thin-film transistors passivated with hybrid passivation layer

Juan Paolo Bermundo, Y. Ishikawa, MN Fujii, Michiel Van Der Zwan, T. Nonaka, Ryoichi Ishihara, Y. Uraoka

Research output: Chapter in Book/Conference proceedings/Edited volumeConference contributionScientificpeer-review

Abstract

We performed excimer laser annealing on passivated amorphous oxide semiconductor thin-film transistors such as amorphous InZnO and InGaZnO. These thin-film transistors were passivated by a hybrid passivation known as polysilsesquioxane. We show that excimer laser annealing is a good low temperature annealing method for high performance amorphous oxide thin-film transistors. © 2014 ITE and SID.
Original languageEnglish
Title of host publicationProceedings The 21st International Display Workshops
EditorsS Komura, A Mikami
Place of PublicationCampbell, CA
PublisherSID
Pages245-246
Number of pages2
Volume1
ISBN (Print)978-1-5108-2779-0
Publication statusPublished - 2014
EventIDW 2014: 21st International Display Workshop 2014 - Niigata, Japan
Duration: 3 Dec 20145 Dec 2014
Conference number: 21

Workshop

WorkshopIDW 2014
Abbreviated titleIDW
CountryJapan
CityNiigata
Period3/12/145/12/14

Keywords

  • Excimer laser annealing
  • Oxide semiconductors
  • Passivation
  • Polysilsesquioxane

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