Abstract
We performed excimer laser annealing on passivated amorphous oxide semiconductor thin-film transistors such as amorphous InZnO and InGaZnO. These thin-film transistors were passivated by a hybrid passivation known as polysilsesquioxane. We show that excimer laser annealing is a good low temperature annealing method for high performance amorphous oxide thin-film transistors. © 2014 ITE and SID.
| Original language | English |
|---|---|
| Title of host publication | Proceedings The 21st International Display Workshops |
| Editors | S Komura, A Mikami |
| Place of Publication | Campbell, CA |
| Publisher | SID |
| Pages | 245-246 |
| Number of pages | 2 |
| Volume | 1 |
| ISBN (Print) | 978-1-5108-2779-0 |
| Publication status | Published - 2014 |
| Event | IDW 2014: 21st International Display Workshop 2014 - Niigata, Japan Duration: 3 Dec 2014 → 5 Dec 2014 Conference number: 21 |
Workshop
| Workshop | IDW 2014 |
|---|---|
| Abbreviated title | IDW |
| Country/Territory | Japan |
| City | Niigata |
| Period | 3/12/14 → 5/12/14 |
Keywords
- Excimer laser annealing
- Oxide semiconductors
- Passivation
- Polysilsesquioxane
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