Extraordinary Hall balance in ultrathin SrRuO3 bilayers

T. C. van Thiel; D. J. Groenendijk; A. D. Caviglia

doi:10.1088/2515-7639/ab7a03

Extraordinary Hall balance in ultrathin SrRuO₃ bilayers

T. C. van Thiel, D. J. Groenendijk, A. D. Caviglia^*

^*Corresponding author for this work

QN/Caviglia Lab

Research output: Contribution to journal › Article › Scientific › peer-review

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Abstract

The correlated 4d transition metal oxide SrRuO₃ (SRO) features an anomalous Hall effect that originates from momentum-space sources of Berry curvature and depends sensitively on the magnetization. Here, we exploit this sensitivity and realize an epitaxial extraordinary Hall balance device, consisting of two ultrathin layers of SRO, separated by an insulating SrTiO₃ (STO) spacer. Our results highlight the potential of ultrathin SRO in the realization of oxide-based spintronic devices.

Original language	English
Article number	025005
Number of pages	7
Journal	JPhys Materials
Volume	3
Issue number	2
DOIs	https://doi.org/10.1088/2515-7639/ab7a03
Publication status	Published - 2020

Keywords

Oxide interfaces
Spintronics
Topological electronics

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10.1088/2515-7639/ab7a03

van_Thiel_2020_J._Phys._Mater._3_025005Final published version, 953 KBLicence: CC BY

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title = "Extraordinary Hall balance in ultrathin SrRuO3 bilayers",

abstract = "The correlated 4d transition metal oxide SrRuO3 (SRO) features an anomalous Hall effect that originates from momentum-space sources of Berry curvature and depends sensitively on the magnetization. Here, we exploit this sensitivity and realize an epitaxial extraordinary Hall balance device, consisting of two ultrathin layers of SRO, separated by an insulating SrTiO3 (STO) spacer. Our results highlight the potential of ultrathin SRO in the realization of oxide-based spintronic devices.",

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AU - van Thiel, T. C.

AU - Groenendijk, D. J.

AU - Caviglia, A. D.

PY - 2020

Y1 - 2020

N2 - The correlated 4d transition metal oxide SrRuO3 (SRO) features an anomalous Hall effect that originates from momentum-space sources of Berry curvature and depends sensitively on the magnetization. Here, we exploit this sensitivity and realize an epitaxial extraordinary Hall balance device, consisting of two ultrathin layers of SRO, separated by an insulating SrTiO3 (STO) spacer. Our results highlight the potential of ultrathin SRO in the realization of oxide-based spintronic devices.

AB - The correlated 4d transition metal oxide SrRuO3 (SRO) features an anomalous Hall effect that originates from momentum-space sources of Berry curvature and depends sensitively on the magnetization. Here, we exploit this sensitivity and realize an epitaxial extraordinary Hall balance device, consisting of two ultrathin layers of SRO, separated by an insulating SrTiO3 (STO) spacer. Our results highlight the potential of ultrathin SRO in the realization of oxide-based spintronic devices.

KW - Oxide interfaces

KW - Spintronics

KW - Topological electronics

UR - http://www.scopus.com/inward/record.url?scp=85101624191&partnerID=8YFLogxK

U2 - 10.1088/2515-7639/ab7a03

DO - 10.1088/2515-7639/ab7a03

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VL - 3

JO - JPhys Materials

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ER -

Extraordinary Hall balance in ultrathin SrRuO₃ bilayers

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Keywords

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