Extraordinary Hall balance in ultrathin SrRuO3 bilayers

T. C. van Thiel, D. J. Groenendijk, A. D. Caviglia*

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

10 Citations (Scopus)
31 Downloads (Pure)

Abstract

The correlated 4d transition metal oxide SrRuO3 (SRO) features an anomalous Hall effect that originates from momentum-space sources of Berry curvature and depends sensitively on the magnetization. Here, we exploit this sensitivity and realize an epitaxial extraordinary Hall balance device, consisting of two ultrathin layers of SRO, separated by an insulating SrTiO3 (STO) spacer. Our results highlight the potential of ultrathin SRO in the realization of oxide-based spintronic devices.

Original languageEnglish
Article number025005
Number of pages7
JournalJPhys Materials
Volume3
Issue number2
DOIs
Publication statusPublished - 2020

Keywords

  • Oxide interfaces
  • Spintronics
  • Topological electronics

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