Extremely ultrashallow junctions for a high-linearity silicon-on-glass RF varactor-diode technology

LK Nanver; F Sarubbi; V Gonda; M Popadic; TLM Scholtes; WB De Boer; K Buisman

Extremely ultrashallow junctions for a high-linearity silicon-on-glass RF varactor-diode technology

LK Nanver, F Sarubbi, V Gonda, M Popadic, TLM Scholtes, WB De Boer, K Buisman

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

1 Citation (Scopus)

Original language	Undefined/Unknown
Title of host publication	IEEE international workshop on junction technology
Editors	YL Jiang, XP Qu, GP Ru, BZ Li
Place of Publication	s.l.
Publisher	IEEE Society
Pages	101-106
Number of pages	6
ISBN (Print)	978-1-4244-1737-7
Publication status	Published - 2008
Event	IWJT 2008, Shanghai, China - s.l. Duration: 15 May 2008 → 16 May 2008

Publication series

Name
Publisher	IEEE

Conference

Conference	IWJT 2008, Shanghai, China
Period	15/05/08 → 16/05/08

Keywords

conference contrib. refereed
Conf.proc. > 3 pag

Cite this

@inproceedings{f9afaf6cb6244d8f92374dd9ff155992,

title = "Extremely ultrashallow junctions for a high-linearity silicon-on-glass RF varactor-diode technology",

keywords = "conference contrib. refereed, Conf.proc. > 3 pag",

author = "LK Nanver and F Sarubbi and V Gonda and M Popadic and TLM Scholtes and {De Boer}, WB and K Buisman",

year = "2008",

language = "Undefined/Unknown",

isbn = "978-1-4244-1737-7",

publisher = "IEEE Society",

pages = "101--106",

editor = "YL Jiang and XP Qu and GP Ru and BZ Li",

booktitle = "IEEE international workshop on junction technology",

note = "IWJT 2008, Shanghai, China ; Conference date: 15-05-2008 Through 16-05-2008",

}

Extremely ultrashallow junctions for a high-linearity silicon-on-glass RF varactor-diode technology. / Nanver, LK; Sarubbi, F; Gonda, V et al.
IEEE international workshop on junction technology. ed. / YL Jiang; XP Qu; GP Ru; BZ Li. s.l.: IEEE Society, 2008. p. 101-106.

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

TY - GEN

T1 - Extremely ultrashallow junctions for a high-linearity silicon-on-glass RF varactor-diode technology

AU - Nanver, LK

AU - Sarubbi, F

AU - Gonda, V

AU - Popadic, M

AU - Scholtes, TLM

AU - De Boer, WB

AU - Buisman, K

PY - 2008

Y1 - 2008

KW - conference contrib. refereed

KW - Conf.proc. > 3 pag

M3 - Conference contribution

SN - 978-1-4244-1737-7

SP - 101

EP - 106

BT - IEEE international workshop on junction technology

A2 - Jiang, YL

A2 - Qu, XP

A2 - Ru, GP

A2 - Li, BZ

PB - IEEE Society

CY - s.l.

T2 - IWJT 2008, Shanghai, China

Y2 - 15 May 2008 through 16 May 2008

ER -