Fabrication and low-temperature transport properties of selectively grown dual-gated single-electron transistors.

J Motohisa, F Nakajima, T Fukui, WG van der Wiel, JM Elzerman, S de Franceschi, LP Kouwenhoven

Research output: Contribution to journalArticleScientificpeer-review

6 Citations (Scopus)
Original languageUndefined/Unknown
Pages (from-to)2797-2799
Number of pages3
JournalApplied Physics Letters
Volume80
Publication statusPublished - 2002

Keywords

  • ZX CWTS 1.00 <= JFIS < 3.00

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