We describe a microfabrication process that, thanks to a specifically tailored sidewall profile, enables for the first-time wafer-scale arrays of high-aspect ratio through-silicon vias (TSVs) coated with DC-sputtered Aluminum, achieving at once superconducting and CMOS-compatible 3D interconnects. Void-free conformal coating of up to 500μm-deep and 50μm-wide vias with a mere 2μm-thick layer of Al, a widely available metal in for IC manufacturing, was demonstrated. Single-via electric resistance as low as 468 mΩ at room temperature and superconductivity at 1.25 K were measured by a cross-bridge Kelvin resistor structure. This work establishes the fabrication of functional superconducting interposers suitable for 3D integration of high-density silicon-based quantum computing architectures.
|Title of host publication||33rd IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2020|
|Number of pages||4|
|Publication status||Published - 1 Jan 2020|
|Event||33rd IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2020 - Vancouver, Canada|
Duration: 18 Jan 2020 → 22 Jan 2020
Conference number: 33
|Conference||33rd IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2020|
|Abbreviated title||MEMS 2020|
|Period||18/01/20 → 22/01/20|
Bibliographical noteGreen Open Access added to TU Delft Institutional Repository ‘You share, we take care!’ – Taverne project https://www.openaccess.nl/en/you-share-we-take-care Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.
- Through-silicon vias