Fabrication of Al-based superconducting high-aspect ratio TSVs for quantum 3D integration

Juan Alfaro Barrantes; Max Mastrangeli; David Thoen; Juan Bueno Lopez; Jochem Baselmans; Lina Sarro

doi:10.1109/MEMS46641.2020.9056165

Fabrication of Al-based superconducting high-aspect ratio TSVs for quantum 3D integration

Juan Alfaro Barrantes, Max Mastrangeli, David Thoen, Juan Bueno Lopez, Jochem Baselmans, Lina Sarro

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

3 Citations (Scopus)

146 Downloads (Pure)

Abstract

We describe a microfabrication process that, thanks to a specifically tailored sidewall profile, enables for the first-time wafer-scale arrays of high-aspect ratio through-silicon vias (TSVs) coated with DC-sputtered Aluminum, achieving at once superconducting and CMOS-compatible 3D interconnects. Void-free conformal coating of up to 500μm-deep and 50μm-wide vias with a mere 2μm-thick layer of Al, a widely available metal in for IC manufacturing, was demonstrated. Single-via electric resistance as low as 468 mΩ at room temperature and superconductivity at 1.25 K were measured by a cross-bridge Kelvin resistor structure. This work establishes the fabrication of functional superconducting interposers suitable for 3D integration of high-density silicon-based quantum computing architectures.

Original language	English
Title of host publication	33rd IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2020
Pages	932-935
Number of pages	4
Volume	2020-January
ISBN (Electronic)	9781728135809
DOIs	https://doi.org/10.1109/MEMS46641.2020.9056165
Publication status	Published - 1 Jan 2020
Event	33rd IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2020 - Vancouver, Canada Duration: 18 Jan 2020 → 22 Jan 2020 Conference number: 33 https://www.mems20.org

Conference

Conference	33rd IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2020
Abbreviated title	MEMS 2020
Country/Territory	Canada
City	Vancouver
Period	18/01/20 → 22/01/20
Internet address	https://www.mems20.org

Bibliographical note

Green Open Access added to TU Delft Institutional Repository ‘You share, we take care!’ – Taverne project https://www.openaccess.nl/en/you-share-we-take-care Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.

Keywords

quantum
superconducting
Through-silicon vias

Access to Document

10.1109/MEMS46641.2020.9056165

09056165Final published version, 2.76 MB

Cite this

Alfaro Barrantes, J., Mastrangeli, M., Thoen, D., Bueno Lopez, J., Baselmans, J., & Sarro, L. (2020). Fabrication of Al-based superconducting high-aspect ratio TSVs for quantum 3D integration. In 33rd IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2020 (Vol. 2020-January, pp. 932-935). Article 9056165 https://doi.org/10.1109/MEMS46641.2020.9056165

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title = "Fabrication of Al-based superconducting high-aspect ratio TSVs for quantum 3D integration",

abstract = "We describe a microfabrication process that, thanks to a specifically tailored sidewall profile, enables for the first-time wafer-scale arrays of high-aspect ratio through-silicon vias (TSVs) coated with DC-sputtered Aluminum, achieving at once superconducting and CMOS-compatible 3D interconnects. Void-free conformal coating of up to 500μm-deep and 50μm-wide vias with a mere 2μm-thick layer of Al, a widely available metal in for IC manufacturing, was demonstrated. Single-via electric resistance as low as 468 mΩ at room temperature and superconductivity at 1.25 K were measured by a cross-bridge Kelvin resistor structure. This work establishes the fabrication of functional superconducting interposers suitable for 3D integration of high-density silicon-based quantum computing architectures.",

keywords = "quantum, superconducting, Through-silicon vias",

author = "{Alfaro Barrantes}, Juan and Max Mastrangeli and David Thoen and {Bueno Lopez}, Juan and Jochem Baselmans and Lina Sarro",

note = "Green Open Access added to TU Delft Institutional Repository {\textquoteleft}You share, we take care!{\textquoteright} – Taverne project https://www.openaccess.nl/en/you-share-we-take-care Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.; 33rd IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2020, MEMS 2020 ; Conference date: 18-01-2020 Through 22-01-2020",

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doi = "10.1109/MEMS46641.2020.9056165",

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Alfaro Barrantes, J, Mastrangeli, M , Thoen, D , Bueno Lopez, J , Baselmans, J & Sarro, L 2020, Fabrication of Al-based superconducting high-aspect ratio TSVs for quantum 3D integration. in 33rd IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2020. vol. 2020-January, 9056165, pp. 932-935, 33rd IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2020, Vancouver, Canada, 18/01/20. https://doi.org/10.1109/MEMS46641.2020.9056165

Fabrication of Al-based superconducting high-aspect ratio TSVs for quantum 3D integration. / Alfaro Barrantes, Juan; Mastrangeli, Max ; Thoen, David et al.
33rd IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2020. Vol. 2020-January 2020. p. 932-935 9056165.

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

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AU - Alfaro Barrantes, Juan

AU - Mastrangeli, Max

AU - Thoen, David

AU - Bueno Lopez, Juan

AU - Baselmans, Jochem

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AB - We describe a microfabrication process that, thanks to a specifically tailored sidewall profile, enables for the first-time wafer-scale arrays of high-aspect ratio through-silicon vias (TSVs) coated with DC-sputtered Aluminum, achieving at once superconducting and CMOS-compatible 3D interconnects. Void-free conformal coating of up to 500μm-deep and 50μm-wide vias with a mere 2μm-thick layer of Al, a widely available metal in for IC manufacturing, was demonstrated. Single-via electric resistance as low as 468 mΩ at room temperature and superconductivity at 1.25 K were measured by a cross-bridge Kelvin resistor structure. This work establishes the fabrication of functional superconducting interposers suitable for 3D integration of high-density silicon-based quantum computing architectures.

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ER -

Fabrication of Al-based superconducting high-aspect ratio TSVs for quantum 3D integration

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Keywords

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