Fabrication of Nanoslits with <111> Etching TSWE Method

Hao Hong, Li Ye, Ke Li, Pasqualina M. Sarro, Guoqi Zhang, Zewen Liu

Research output: Chapter in Book/Conference proceedings/Edited volumeConference contributionScientificpeer-review

Abstract

In this paper, we report a modified three step anisotropic wet etching (TSWE) method to fabricate solid-state silicon nanoslits. The slit-opening process is performed by <111> crystal plane etching. The etching rate of the <111> crystal plane is reasonably slow as it is only 1/45 of the <100> etching rate, thus allowing and therefore good slits-opening controllability. By slowly etching the <111> crystal plane, the over-etching was effectively reduced. Perfectly rectangular nanoslits with different dimensions were successfully obtained. The smallest achieved feature size of the nanoslit is 8.3 nm.
Original languageEnglish
Title of host publicationProceedings of the 16th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2021
PublisherIEEE
Pages174-177
Number of pages4
ISBN (Electronic)978-1-6654-1941-3
ISBN (Print)978-1-6654-3008-1
DOIs
Publication statusPublished - 2021
Event2021 IEEE 16th International Conference on Nano/Micro Engineered and Molecular Systems (NEMS) - Xiamen, China
Duration: 25 Apr 202129 Apr 2021
Conference number: 16th

Publication series

NameProceedings of the 16th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2021

Conference

Conference2021 IEEE 16th International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)
Abbreviated titleIEEE-NEMS 2021
CountryChina
CityXiamen
Period25/04/2129/04/21

Bibliographical note

Green Open Access added to TU Delft Institutional Repository ‘You share, we take care!’ – Taverne project https://www.openaccess.nl/en/you-share-we-take-care
Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.

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