In this paper, we report a modified three step anisotropic wet etching (TSWE) method to fabricate solid-state silicon nanoslits. The slit-opening process is performed by <111> crystal plane etching. The etching rate of the <111> crystal plane is reasonably slow as it is only 1/45 of the <100> etching rate, thus allowing and therefore good slits-opening controllability. By slowly etching the <111> crystal plane, the over-etching was effectively reduced. Perfectly rectangular nanoslits with different dimensions were successfully obtained. The smallest achieved feature size of the nanoslit is 8.3 nm.
|Title of host publication||Proceedings of the 16th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2021|
|Number of pages||4|
|Publication status||Published - 2021|
|Event||2021 IEEE 16th International Conference on Nano/Micro Engineered and Molecular Systems (NEMS) - Xiamen, China|
Duration: 25 Apr 2021 → 29 Apr 2021
Conference number: 16th
|Name||Proceedings of the 16th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2021|
|Conference||2021 IEEE 16th International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)|
|Abbreviated title||IEEE-NEMS 2021|
|Period||25/04/21 → 29/04/21|
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