Fan-Out Panel-Level PCB-Embedded SiC Power MOSFETs Packaging

Fengze Hou, Qidong Wang, Min Chen, Guoqi Zhang, Braham Ferreira, Wenbo Wang, Rui Ma, Meiying Su, Yang Song, More Authors

Research output: Contribution to journalArticleScientificpeer-review

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Abstract

In this article, a novel fan-out panel-level printed circuit board (PCB)-embedded package for phase-leg silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) power module is presented. Electro-thermo-mechanical co-design was conducted, and the maximum package parasitic inductance was found to be about 1.24 nH at 100 kHz. Compared with wire-bonded packages, the parasitic inductances of the PCB-embedded package decreased at least by 87.6%. Compared with blind via structure, the thermal resistance of the proposed blind block structure reduced at most by about 26%, and the stress of the SiC MOSFETs decreased by about 45.2%. Then, a novel PCB-embedded packaging process was developed, and three key packaging processes were analyzed. Furthermore, effect of PCB-embedded package on static characterization of SiC MOSFET was analyzed, and it was found that: 1) Output current of PCB-embedded package was decreased under a certain gate-source voltage compared to SiC die; 2) Miller capacitance of SiC MOSFET was increased thanks to parasitic capacitance induced by package; and 3) compared with SiC die, nonflat miller plateau of the PCB-embedded package extends, and as drain-source voltage increases, the nonflat miller plateau extends. Lastly, switching characteristics of the PCB-embedded package and TO-247 package were compared. The results show that the PCB-embedded package has smaller parasitic inductances.

Original languageEnglish
Article number8894039
Pages (from-to)367-380
Number of pages14
JournalIEEE Journal of Emerging and Selected Topics in Power Electronics
Volume8
Issue number1
DOIs
Publication statusPublished - 1 Mar 2020

Keywords

  • Electro-thermo-mechanical codesign
  • phase-leg silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) power module
  • printed circuit board (PCB)-embedded package
  • static characterization
  • switching characterization

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  • Cite this

    Hou, F., Wang, Q., Chen, M., Zhang, G., Ferreira, B., Wang, W., Ma, R., Su, M., Song, Y., & More Authors (2020). Fan-Out Panel-Level PCB-Embedded SiC Power MOSFETs Packaging. IEEE Journal of Emerging and Selected Topics in Power Electronics, 8(1), 367-380. [8894039]. https://doi.org/10.1109/JESTPE.2019.2952238